S29CD016G0JDEN017 datasheet, PDF

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S29CD016G0JDEN017: DescriptionFlash, 512KX32, 67ns, 7.44 X 4.46 MM, DIE-76; Categorystorage storage; File Size438KB，15 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/

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S29CD016G0JDEN017 Overview

Flash, 512KX32, 67ns, 7.44 X 4.46 MM, DIE-76

S29CD016G0JDEN017 Parametric

Parameter Name	Attribute value
Maker	SPANSION
Parts packaging code	DIE
package instruction	7.44 X 4.46 MM, DIE-76
Contacts	76
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	67 ns
Other features	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup block	BOTTOM/TOP
JESD-30 code	R-XUUC-N76
memory density	16777216 bit
Memory IC Type	FLASH
memory width	32
Number of functions	1
Number of terminals	76
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	512KX32
Package body material	UNSPECIFIED
encapsulated code	DIE
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Parallel/Serial	PARALLEL
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum supply voltage (Vsup)	2.75 V
Minimum supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal form	NO LEAD
Terminal location	UPPER
type	NOR TYPE

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S29CD016G Known Good Die

16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only

Burst Mode, Dual Boot, Simultaneous Read/Write

Flash Memory

Data Sheet Supplement

Distinctive Characteristics

Architecture Advantages

Simultaneous Read/Write operations

— Data can be continuously read from the 75% bank

while executing erase/program functions in the 25%

bank

— Zero latency between read and write operations

— Two bank architecture: 75%/25%

Versatile I/O™ control

— Device generates data output voltages and tolerates

data input voltages as determined by the voltage on

the V

— 1.65 V to 2.75 V compatible I/O signals

— 3.6 V tolerant I/O signals

User-Defined x32 Data Bus

Dual Boot Block

— Top and bottom boot in the same device

Software Features

Persistent Sector Protection

— A command sector protection method to lock

combinations of individual sectors and sector groups

to prevent program or erase operations within that

sector (requires only V

levels)

Flexible sector architecture

— Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes

sectors

Password Sector Protection

Manufactured on 0.17 µm process technology

SecSi (Secured Silicon) Sector (256 Bytes)

—

Factory locked and identifiable:

16 bytes for secure,

random factory Electronic Serial Number; remainder

may be customer data programmed by Spansion

—

Customer lockable:

Can be read, programmed or

erased just like other sectors. Once locked, data

cannot be changed

— A sophisticated sector protection method to lock

combinations of individual sectors and sector groups

to prevent program or erase operations within that

sector using a user-definable 64-bit password

Supports Common Flash Interface (CFI)

Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

Programmable Burst interface

— Interface to any high performance processor

— Modes of Burst Read Operation:

—

Linear Burst:

4 double words and 8 double words

with wrap around

Data# Polling and toggle bits

— Provides a software method of detecting program or

erase operation completion

Single power supply operation

— Optimized for 2.5 to 2.75 Volt read, erase, and

program operations

Hardware Features

Program Suspend/Resume & Erase Suspend/

Resume

— Suspends program or erase operations to allow

reading, programming, or erasing in same bank

Compatibility with JEDEC standards (JC42.4)

— Software compatible with single-power supply Flash

— Backward-compatible with Spansion Am29LV and

Am29F, and Fujitsu MBM29LV and MBM29F flash

memories

Hardware Reset (RESET#), Ready/Busy#

(RY/BY#), and Write Protect (WP#) inputs

ACC input

— Accelerates programming time for higher throughput

during system production

Performance Characteristics

High performance read access

— Initial/random access times as fast as 64 ns

— Burst access time as fast as 10 ns

Quality and reliability levels equivalent to

standard packaged components

Ultra low power consumption

— Burst Mode Read: 90 mA @ 56 MHz max

— Program/Erase: 50 mA max

— Standby mode: CMOS: 150 µA max

1 million write cycles per sector typical

20 year data retention typical

Publication Number

S29CD016G_KGD

Revision

Amendment

Issue Date

October 21, 2005

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