Transient Voltage Suppressors Array for ESD Protection
ESD05V23T-2L
Description
The ESD05V23T-2L is designed to protect voltage sensitive
components from ESD and transient voltage events. Excellent
clamping capability, low leakage, and fast response time,
make these parts ideal for ESD protection on designs where
board space is at a premium.
Low Capacitance
SOT-23
Feature
u
u
u
u
u
u
u
u
350 Watts Peak Pulse Power per Line (tp=8/20μs)
Protects two I/O lines
Low clamping voltage
Working voltages : 5V
Low leakage current
IEC61000-4-2 (ESD)
±15kV
(air),
±8kV
(contact)
IEC61000-4-4 (EFT) 40A (5/50ηs)
IEC61000-4-5 (Lightning) 12A (8/20μs)
Functional Diagram
Applications
u
u
u
u
u
u
u
u
USB Power & Data Line Protection
Ethernet 10BaseT
I C Bus Protection
Video Line Protection
T1/E1 secondary IC Side Protection
Microcontroller Input Protection
ISDN S/T Interface
WAN/LAN Equipment
2
Mechanical Characteristics
u
u
u
u
u
u
JEDEC SOT-23 Package
Molding Compound Flammability Rating : UL 94V-0
Weight 8.0 Milligrams (Approximate)
Quantity Per Reel : 3,000pcs
Reel Size : 7 inch
Lead Finish : Lead Free
Mechanical Characteristics
Symbol
P
PP
T
L
T
STG
T
J
Parameter
Peak Pulse Power (tp=8/20μs waveform)
Lead Soldering Temperature
Storage Temperature Range
Operating Temperature Range
IEC61000-4-2 (ESD)
Air Discharge
Contact Discharge
IEC61000-4-4 (EFT)
IEC61000-4-5 ( Lightning )
Value
350
260 (10sec)
-55 to +150
-55 to +150
±15
±8
40
12
Units
W
ºC
ºC
ºC
KV
A
A
UN Semiconductor Co., Ltd.
Revision January 06, 2014
www.unsemi.com.tw
1/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
ESD05V23T-2L
Electrical Characteristics
(@ 25℃ Unless Otherwise Specified )
Device
Marking
V
RWM
(V)
(Max.)
5
V
B
(V)
(Min.)
6
I
T
(mA)
V
C
@1A
(Max.)
9.8
V
C
(Max.)
(@A)
Low Capacitance
Part Number
I
R
(μA)
(Max.)
1
C
(pF)
(Typ.)
1
ESD05V23T-2L
Y D05
1
12
5
Characteristic Curves
Fig1.
8/20μs Pulse Waveform
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
Percent of Peak Pulse Current %
90%
120
I
PP
- Peak Pulse Current - % of I
PP
100
80
60
40
t
d
=t I
PP
/2
20
0
0
5
10
15
t - Time (μs)
20
25
30
t
r
Peak Value I
PP
TEST
WAVEFORM
PARAMETERS
t
r
=8μs
t
d
=20μs
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
Fig3.
8
Forward Voltage - Vr (V)
7
Fig4.
Power Derating Curve
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Ambient Temperature
–
T
A
(ºC)
5
4
3
2
1
0
0
1
2
3
4
Peak Pulse Current - I
PP
(A)
5
6
Waveform
Parameters
tr = 8μs
td = 20μs
UN Semiconductor Co., Ltd.
Revision January 06, 2014
% of Rated Power
6
www.unsemi.com.tw
2/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
ESD05V23T-2L
Characteristic Curves
Fig5.
ESD Clamping (8KV Contac per IEC61000-4-2)
Low Capacitance
SOT-23 Package Outline & Dimensions
Millimeters
Symbol
Min.
A
A1
b
c
D
E
e
L
H
E
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.35
2.10
Nom.
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.54
2.40
Max.
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.69
2.64
Min.
0.035
0.001
0.15
0.003
0.110
0.047
0.070
0.014
0.083
Nom.
0.040
0.002
0.18
0.005
0.114
0.051
0.075
0.021
0.094
Inches
0.031
0.037
0.035
0.079
Max.
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.029
0.104
Inches
Soldering Footprint
Symbol
X
X1
Y
Z
Millimeters
0.80
0.95
0.90
2.00
UN Semiconductor Co., Ltd.
Revision January 06, 2014
www.unsemi.com.tw
3/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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