FT61982-20LM datasheet, PDF - EEWORLD Datasheet

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FT61982-20LM: DescriptionStandard SRAM, 16KX4, 20ns, CMOS, CQCC28, 0.350 X 0.550 INCH, LCC-28; Categorystorage storage; File Size631KB，14 Pages; ManufacturerForce Technologies Ltd.

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FT61982-20LM Overview

Standard SRAM, 16KX4, 20ns, CMOS, CQCC28, 0.350 X 0.550 INCH, LCC-28

FT61982-20LM Parametric

Parameter Name	Attribute value
Maker	Force Technologies Ltd.
Parts packaging code	QLCC
package instruction	QCCN,
Contacts	28
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	20 ns
JESD-30 code	R-CQCC-N28
length	13.97 mm
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of terminals	28
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX4
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	1.9 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
width	8.89 mm

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FT61981/FT61981L

FT61982/FT61982L

FEATURES

Full CMOS, 6T Cell

High Speed (Equal Access and Cycle Times)

– 10/12/15/20/25 ns (Commercial)

– 12/15/20/25/35 ns (Industrial)

– 15/20/25/35/45 ns (Military)

Low Power Operation (Commercial/Military)

Output Enable and Dual Chip Enable Functions

5V ± 10% Power Supply

ULTRA HIGH SPEED 16K x 4

CMOS STATIC RAMS

Data Retention with 2.0V Supply, 10 µA Typical

Current (FT61981L/1982L Military)

Separate Inputs and Outputs

–

FT61981/L

Input Data at Outputs during Write

–

FT61982/L

Outputs in High Z during Write

Fully TTL Compatible Inputs and Outputs

Standard Pinout (JEDEC Approved)

– 28-Pin 300 mil DIP, SOJ

– 28-Pin 350 x 550 mil LCC

– 28-Pin CERPACK

DESCRIPTION

The

FT61981/L

and

FT61982/L

are 65,536-bit (16Kx4)

ultra high-speed static RAMs similar to the

FT6198,

but

with separate data I/O pins. The

FT61981/L

feature a

transparent write operation when

is low; the outputs

of the

FT61982/L

are in high impedance during the write

cycle. All devices have low power standby modes. The

RAMs operate from a single 5V ± 10% tolerance power

supply. With battery backup, data integrity is maintained

for supply voltages down to 2.0V. Current drain is

typically 10 µA from 2.0V supply.

Access times as fast as 10 nanoseconds are available,

permitting greatly enhanced system operating speeds.

CMOS is used to reduce power consumption. For the

FT61982L

and

FT61981L,

power is only 5.5 mW standby

with CMOS input levels.

The

FT61981/L

and

FT61982/L

are available in 28-pin 300

mil DIP and SOJ, 28-pin 350x550 mil LCC and a 28-pin

CERPACK package providing excellent board level den-

sities.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATIONS

FT61982

FT61981

DIP (P5, C5, D5-2), SOJ (J5)

CERPACK (F4) SIMILAR

FT61981/

1982

LCC (L5)

REV 1.1

1/14

2008

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