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IRF7416TR

Description
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size237KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRF7416TR Overview

Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

IRF7416TR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instructionSO-8
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionMOSFET P-CH 30V 10A 8-SOIC
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)370 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level2
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)45 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 95137A
IRF7416PbF
l
l
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
HEXFET
®
Power MOSFET
S
1
2
3
4
8
7
A
D
D
D
D
S
S
G
V
DSS
= -30V
R
DS(on)
= 0.02Ω
6
5
Description
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
V/ns
°C
c
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
e
d
Thermal Resistance
R
θJA
Junction-to-Ambient
g
Parameter
Max.
50
Units
°C/W
www.irf.com
1
06/29/11

IRF7416TR Related Products

IRF7416TR
Description Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Is it Rohs certified? incompatible
Maker Infineon
package instruction SO-8
Reach Compliance Code compliant
ECCN code EAR99
Samacsys Description MOSFET P-CH 30V 10A 8-SOIC
Other features LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 370 mJ
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V
Maximum drain current (ID) 10 A
Maximum drain-source on-resistance 0.02 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MS-012AA
JESD-30 code R-PDSO-G8
JESD-609 code e3
Humidity sensitivity level 2
Number of components 1
Number of terminals 8
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type P-CHANNEL
Maximum pulsed drain current (IDM) 45 A
Certification status Not Qualified
surface mount YES
Terminal surface Matte Tin (Sn)
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
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