Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
Voltage
Diode Reverse Recovery Time
I
F
= 13 A, d
iF
/d
t
= 100 A/µs
Diode Reverse Recovery Charge
2.1
0.74
25
14
1.2
A
V
nS
nC
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
50°C/W when mounted
on a 1in
2
pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2
Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6294 Rev D(W)
FDS6294
Typical Characteristics
60
50
I
D
, DRAIN CURRENT (A)
40
30
20
10
0
0
2.2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
6.0V
4.0V
4.5V
3.5.V
2
V
GS
= 3.5V
1.8
1.6
1.4
1.2
1
0.8
0.5
1
1.5
2
2.5
4.0V
4.5V
5.0V
6.0V
10V
3.0V
0
10
20
30
40
50
60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.028
R
DS(ON)
, ON-RESISTANCE (OHM)
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
I
D
= 13A
V
GS
= 10V
I
D
= 13A
0.024
0.02
0.016
T
A
= 125
o
C
0.012
0.008
T
A
= 25
o
C
0.004
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 3. On-Resistance Variation with
Temperature.
70
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
T
A
= -55 C
60
I
D
, DRAIN CURRENT (A)
50
40
30
20
10
0
1.5
2
2.5
3
3.5
25
o
C
125
o
C
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
o
V
GS
= 0V
10
T
A
= 125
o
C
1
25
o
C
0.1
-55
o
C
0.01
0.001
0.0001
4
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6294 Rev D(W)
FDS6294
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 13A
8
V
DS
= 10V
15V
1500
C
ISS
1200
CAPACITANCE (pF)
20V
f = 1MHz
V
GS
= 0 V
6
900
4
600
C
OSS
300
C
RSS
2
0
0
5
10
Q
g
, GATE CHARGE (nC)
15
20
0
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
100µs
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
10
1ms
10ms
100ms
1s
10s
DC
40
SINGLE PULSE
R
θJA
= 125°C/W
T
A
= 25°C
30
1
20
0.1
V
GS
= 10V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25 C
o
10
0.01
0.01
0.1
1
10
100
0
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 125 °C/W
0.1
0.1
0.05
0.02
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6294 Rev D(W)
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failure to perform when properly used in accordance
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effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
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