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DMG4496SSSQ-13

Description
Power Field-Effect Transistor, 10A I(D), 30V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
CategoryDiscrete semiconductor    The transistor   
File Size237KB,6 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
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DMG4496SSSQ-13 Overview

Power Field-Effect Transistor, 10A I(D), 30V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8

DMG4496SSSQ-13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionGREEN, PLASTIC, SOP-8
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.0215 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.42 W
Maximum pulsed drain current (IDM)60 A
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
DMG4496SSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
30V
R
DS(ON)
max
21.5mΩ @ V
GS
= 10V
29mΩ @ V
GS
= 4.5V
I
D
max
T
A
= +25°C
10A
8A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.074 grams (approximate)
Applications
Backlighting
Power Management Functions
DC-DC Converters
SO-8
S
S
S
G
D
D
D
D
Top View
Internal Schematic
D
G
S
Equivalent circuit
Top View
Ordering Information
(Note 4 & 5)
Part Number
DMG4496SSS-13
DMG4496SSSQ-13
Notes:
Compliance
Standard
Automotive
Case
SO-8
SO-8
Packaging
2500 / Tape & Reel
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
G4496SS
YY WW
1
4
1
G4496SS
YY WW
4
= Manufacturer’s Marking
G4496SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4496SSS
Document number: DS32048 Rev. 5 - 2

DMG4496SSSQ-13 Related Products

DMG4496SSSQ-13
Description Power Field-Effect Transistor, 10A I(D), 30V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker Diodes Incorporated
package instruction GREEN, PLASTIC, SOP-8
Reach Compliance Code compliant
ECCN code EAR99
Other features HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V
Maximum drain current (Abs) (ID) 10 A
Maximum drain current (ID) 10 A
Maximum drain-source on-resistance 0.0215 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 8
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 1.42 W
Maximum pulsed drain current (IDM) 60 A
Guideline AEC-Q101
surface mount YES
Terminal surface Matte Tin (Sn)
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature 40
transistor applications SWITCHING
Transistor component materials SILICON
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