Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT
Silicon Pin Photodiode with Daylight Filter; in SMT
Lead (Pb) Free Product - RoHS Compliant
BP 104 F
BP 104 FS
BP 104 F
BP 104 FS
Wesentliche Merkmale
•
•
•
•
Speziell geeignet für Anwendungen bei 950 nm
Kurze Schaltzeit (typ. 20 ns)
DIL-Plastikbauform mit hoher Packungsdichte
BP 104 FS: geeignet für Vapor-Phase Löten
und IR-Reflow Löten
Features
•
•
•
•
Especially suitable for applications of 950 nm
Short switching time (typ. 20 ns)
DIL plastic package with high packing density
BP 104 FS: suitable for vapor-phase and
IR-reflow soldering
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern, Gerätefernsteuerungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
Typ
Type
BP 104 F
BP 104 FS
Bestellnummer
Ordering Code
Q62702-P0084
Q62702-P2627
Applications
• IR remote control of hi-fi and TV sets, video
tape recorders, dimmers, remote controls of
various equipment
• Photointerrupters
2005-03-14
1
BP 104 F, BP 104 FS
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
T
A
= 25
°
C
Total power dissipation
Kennwerte
(T
A
= 25
°
C,
λ
= 950 nm)
Characteristics
Bezeichnung
Parameter
Fotostrom
Photocurrent
V
R
= 5 V,
E
e
= 1 mW/cm
2
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
= 10 % von
S
max
Spectral range of sensitivity
S
= 10 % of
S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Symbol
Symbol
Wert
Value
34 (≥ 25)
Einheit
Unit
µA
Symbol
Symbol
Wert
Value
– 40 … + 100
20
150
Einheit
Unit
°
C
V
mW
T
op
;
T
stg
V
R
P
tot
I
P
λ
S max
λ
950
800 … 1100
nm
nm
A
4.84
2.20
×
2.20
±
60
2 (≤30)
0.70
0.90
330 (≥ 250)
mm
2
mm
×
mm
Grad
deg.
nA
A/W
Electrons
Photon
mV
Abmessung der bestrahlungsempfindlichen Fläche
L
×
B
Dimensions of radiant sensitive area
L
×
W
Halbwinkel
Half angle
Dunkelstrom,
V
R
= 10 V
Dark current
Spektrale Fotoempfindlichkeit
Spectral sensitivity
Quantenausbeute
Quantum yield
Leerlaufspannung,
E
e
= 0.5 mW/cm
2
Open-circuit voltage
ϕ
I
R
S
λ
η
V
O
2005-03-14
2
BP 104 F, BP 104 FS
Kennwerte
(T
A
= 25
°
C,
λ
= 950 nm)
Characteristics
(cont’d)
Bezeichnung
Parameter
Kurzschlussstrom,
E
e
= 0.5 mW/cm
2
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 50
Ω;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 800
µA
Durchlassspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
Kapazität,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V
Nachweisgrenze,
V
R
= 10 V
Detection limit
Symbol
Symbol
Wert
Value
17
20
Einheit
Unit
µA
ns
I
SC
t
r
,
t
f
V
F
C
0
TC
V
TC
I
NEP
1.3
48
– 2.6
0.18
3.6
×
10
–14
V
pF
mV/K
%/K
W
-----------
-
Hz
cm
×
Hz
--------------------------
-
W
D*
6.1
×
10
12
2005-03-14
3
BP 104 F, BP 104 FS
Relative Spectral Sensitivity
S
rel
=
f
(λ)
100
S
rel
%
80
OHF00368
Photocurrent
I
P
=
f
(E
e
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(
E
e
)
Ι
P
10
3
µ
A
OHF01056
Total Power Dissipation
P
tot
=
f
(
T
A
)
160
mW
P
tot
140
120
100
OHF00958
10
4
mV
V
O
10
3
10
2
V
O
60
10
1
10
2
80
60
40
10
0
Ι
P
10
1
40
20
20
0
700
800
900
1000
nm
λ
1200
10
-1
10
0
10
0
10
1
10
2
µ
W/cm
2
10
4
0
0
20
40
60
E
e
80 ˚C 100
T
A
Dark Current
I
R
=
f
(
V
R
),
E
= 0
4000
pA
OHFD1781
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
60
C
pF
50
OHF01778
Dark Current
I
R
=
f
(
T
A
),
V
R
= 10 V,
E
= 0
10
3
OHF00082
Ι
R
nA
10
2
Ι
R
3000
40
2000
30
10
1
20
1000
10
0
10
0
0
5
10
15
V
R
V 20
0
-2
10
10
-1
10
0
10
1
V 10
2
V
R
10
-1
0
20
40
60
80 ˚C 100
T
A
Directional Characteristics
S
rel
=
f
(ϕ)
40
30
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2005-03-14
4
BP 104 F, BP 104 FS
Maßzeichnung
Package Outlines
BP 104 F
0.6 (0.024)
0.4 (0.016)
0.8 (0.031)
0.6 (0.024)
4.0 (0.157)
3.7 (0.146)
4.5 (0.177)
4.3 (0.169)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0.6 (0.024)
0.4 (0.016)
0 ... 5˚
5.08 (0.200)
spacing
1.8 (0.071)
1.4 (0.055)
Photosensitive area
2.20 (0.087) x 2.20 (0.087)
GEOY6075
Approx. weight 0.1 g
BP 104 FS
1.2 (0.047)
1.1 (0.043)
0...0.1
(0...0.004)
0.3 (0.012)
Chip position
1.1 (0.043)
0.9 (0.035)
6.7 (0.264)
6.2 (0.244)
4.5 (0.177)
4.3 (0.169)
0.9 (0.035)
0.7 (0.028)
1.6 (0.063)
±0.2 (0.008)
1.7 (0.067)
1.5 (0.059)
4.0 (0.157)
3.7 (0.146)
Photosensitive area
Cathode lead
2.20 (0.087) x 2.20 (0.087)
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2005-03-14
5
˚
0.2 (0.008)
0.1 (0.004)
0...5
GEOY6861
3.5 (0.138)
3.0 (0.118)
0.6 (0.024)
0.4 (0.016)
0.5 (0.020)
0.6 (0.024)
0.4 (0.016)
2.2 (0.087)
1.9 (0.075)
Cathode marking
5.4 (0.213)
4.9 (0.193)
Chip position
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