ADVANCE INFORMATION
Am29LV128M
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
s
Single power supply operation
— 3 volt read, erase, and program operations
s
VersatileI/O control
— Device generates and tolerates voltages on CE# and
DQ I/O as determined by the voltage on the V
IO
pin;
operates from 1.65 to 3.6 V
s
Manufactured on 0.23 µm MirrorBit process
technology
s
SecSi (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
s
Flexible sector architecture
— Two hundred fifty-six 32 Kword (64 Kbyte) sectors
s
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
s
Minimum 100,000 erase cycle guarantee per sector
s
20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
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High performance
— 90 ns access time
— 25 ns page read times
— 0.4 s typical sector erase time
— 5.9 µs typical write buffer word programming time:
16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
s
Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
s
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
s
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
s
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
25270
Rev:
A
Amendment/+2
Issue Date:
April 26, 2002
Refer to AMD’s Website (www.amd.com) for the latest information.
A D V A N C E
I N F O R M A T I O N
GENERAL DESCRIPTION
The Am29LV128M is a 128 Mbit, 3.0 volt single power
supply flash memory devices organized as 8,388,608
words or 16,777,216 bytes. The device has a 16-bit
wide data bus that can also function as an 8-bit wide
data bus by using the BYTE# input. The device can be
programmed either in the host system or in standard
EPROM programmers.
An access time of 90, 100, 110, or 120 ns is available.
Note that each access time has a specific operating
voltage range (V
CC
) and an I/O voltage range (V
IO
), as
specified in the
Product Selector Guide
and the
Order-
ing Information
sections. The device is offered in a
56-pin TSOP or Fortified BGA package. Each device
has separate chip enable (CE#), write enable (WE#)
and output enable (OE#) controls.
Each device requires only a
single 3.0 volt power
supply
for both read and write functions. In addition to
a V
CC
input, a high-voltage
accelerated program
(WP#/ACC)
input provides shorter programming times
through increased current. This feature is intended to
facilitate factory throughput during system production,
but may also be used in the field if desired.
The device is entirely command set compatible with
the
JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle)
status bits
or
monitor the
Ready/Busy# (RY/BY#)
output to deter-
mine whether the operation is complete. To facilitate
programming, an
Unlock Bypass
mode reduces com-
mand sequence overhead by requiring only two write
cycles to program data instead of four.
The
VersatileI/O™
(V
IO
) control allows the host sys-
tem to set the voltage levels that the device generates
and tolerates voltages on CE# and DQ I/Os to the
same voltage level that is asserted on the V
IO
pin. This
allows the device to operate in a 1.8 V or 3 V system
environment as required.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
equipment.
The
Erase Suspend/Erase Resume
feature allows
the host system to pause an erase operation in a
given sector to read or program any other sector and
then complete the erase operation. The
Program
Suspend/Program Resume
feature enables the host
system to pause a program operation in a given sector
to read any other sector and then complete the pro-
gram operation.
The
hardware RESET# pin
terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power c ons umption in the
standby mode
when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The
SecSi (Secured Silicon) Sector
provides a
128-word/256-byte area for code or data that can be
permanently protected. Once this sector is protected,
no further changes within the sector can occur.
The
Write Protect (WP#/ACC)
feature protects the
first or last sector by asserting a logic low on the WP#
pin.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.
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Am29LV128M
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