SMAJ10 datasheet, PDF - EEWORLD Datasheet

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SMAJ10: Description400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size731KB，7 Pages; ManufacturerUN semiconductor; Websitehttp://www.unsemi.com.tw/

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SMAJ10 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC

SMAJ10 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Maximum breakdown voltage	13.6 V
Minimum breakdown voltage	11.1 V
Processing package description	GREEN, PLASTIC, SMA, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	PURE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
Craftsmanship	AVALANCHE
structure	SINGLE
Diode component materials	SILICON
Maximum power consumption limit	1 W
polarity	UNIDIRECTIONAL
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
shutdown voltage	10 V
Maximum non-repetitive peak speed power	400 W

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Surface Mount Transient Voltage Suppressors (TVS)

SMAJ Series

Description

The SMAJ series is designed specifically to protect sensitive electronic

equipment from voltage transients induced by lightning and other transient

voltage events.

5.0 To 440 V

400W

Uni-directional

Bi-directional

Features

For surface mounted applications in order to optimize board space

Low leakage

Uni and Bidirectional unit

Glass passivated junction

Low inductance

Excellent clamping capability

400W Peak power capability at 10

1000µs waveform Repetition rate

(duty cycle):0.01%

Fast response time: typically less than 1.0ps from 0 Volts to V

min

Typical I

less than 5μA above 12V

High Temperature soldering: 260°C/40 seconds at terminals

Typical maximum temperature coefficient

ΔV

= 0.1%

@25°C×

ΔT

Plastic package has Underwriters Laboratory Flammability 94V-0

Matte tin lead–free Plated

Halogen free and RoHS compliant

Typical failure mode is short from over-specified voltage or current

Whisker test is conducted based on JEDEC JESD201A per its table

4a and 4c

IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)

ESD protection of data lines in accordance with IEC 61000-4-2

(IEC801-2)

EFT protection of data lines in accordance with IEC 61000-4-4

(IEC801-4)

Functional Diagram

Bi-directional

Cathode

Uni-direction

Anode

Applications

TVS devices are ideal for the protection of I/O interfaces, V

bus and other vulnerable circuits used in Telecom, Computer,

Industrial and Consumer electronic applications.

Maximum Ratings

=25℃ unless otherwise noted)

Parameter

Symbol

PPM

M(AV)

FSM

, T

STG

Value

400

See Next Table

1.0

3.5/5.0

-55 to +150

Unit

Watts

Amps

Watt

Amps

Voltage

°C

Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note

1), (Note 2)

Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)

Power Dissipation on Infinite Heat Sink at T

=75°C

Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)

Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only

(Note 4)

Operating junction and Storage Temperature Range.

Notes:

1. Non-repetitive current pulse, per Fig. 3 and derated above T

= 25°C per Fig. 2.

2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.

4. V

< 3.5V for V

< 200V and V

< 6.5V for V

> 201V.

UN Semiconductor Co., Ltd.

Revision

October 18, 2013

www.unsemi.com.tw

1/7

@ UN Semiconductor Co., Ltd. 2013

Specifications are subject to change without notice.

Please refer to www.unsemi.com.tw for current information.

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