ST183CPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• International standard case TO-200AB (A-PUK)
TO-200AB (A-PUK)
RoHS
COMPLIANT
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
PRODUCT SUMMARY
I
T(AV)
370 A
TYPICAL APPLICATIONS
•
•
•
•
Inverters
Choppers
Induction heating
All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
TEST CONDITIONS
VALUES
370
T
hs
55
690
I
T(RMS)
T
hs
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
V
DRM
/V
RRM
t
q
T
J
Range
25
4900
A
5130
120
110
400 to 800
10 to 20
- 40 to 125
V
µs
°C
kA
2
s
UNITS
A
°C
A
°C
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
ST183C..C
08
800
900
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
40
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Document Number: 94368
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST183CPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
770
730
600
350
50
V
DRM
50
40
47/0.22
660
600
490
270
1220
1270
1210
860
50
V
DRM
-
1160
1090
1040
730
5450
2760
1600
800
50
V
DRM
-
4960
2420
1370
680
V
A/µs
55
47/0.22
°C
Ω/µF
A
55
40
47/0.22
55
40
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
I
2
√t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
370 (130)
55 (85)
690
4900
5130
4120
Sinusoidal half wave,
initial T
J
= T
J
maximum
4310
120
110
85
78
1200
1.80
1.40
1.45
0.67
0.58
600
1000
mΩ
V
kA
2
√s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 600 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
Ω,
I
G
= 1 A
mA
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94368
Revision: 30-Apr-08
ST183CPbF Series
Inverter Grade Thyristors
Vishay High Power Products
(Hockey PUK Version), 370 A
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
minimum
Maximum turn-off time
maximum
t
q
SYMBOL
dI/dt
t
d
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 µs
Resistive load, gate pulse: 10 V, 5
Ω
source
T
J
= T
J
maximum,
I
TM
= 300 A, commutating dI/dt = 20 A/µs
V
R
= 50 V, t
p
= 500 µs, dV/dt: See table in device code
VALUES
1000
1.1
10
20
µs
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
40
UNITS
V/µs
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
Ω
T
J
= T
J
maximum, t
p
≤
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
T
J
= T
J
maximum, rated V
DRM
applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.17
0.08
0.033
0.017
4900
(500)
50
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
R
thC-hs
TO-200AB (A-PUK)
Document Number: 94368
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST183CPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
ΔR
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.015
0.018
0.024
0.035
0.060
DOUBLE SIDE
0.016
0.019
0.024
0.035
0.060
RECTANGULAR CONDUCTION
SINGLE SIDE
0.011
0.019
0.026
0.036
0.060
DOUBLE SIDE
0.011
0.019
0.026
0.037
0.061
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
130
130
Maximum Allowable
Heatsink Temperature (°C)
Maximum Allowable
Heatsink Temperature (°C)
120
110
100
90
80
70
60
50
40
0
40
80
30°
ST183C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
120
110
100
90
80
70
60
50
30°
40
30
ST183C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
Ø
Ø
Conduction angle
Conduction angle
60°
90°
180°
120°
60°
90°
180°
120°
120
160
200
240
0
50
100 150 200 250 300 350 400 450
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
130
120
130
Maximum Allowable
Heatsink Temperature (°C)
110
100
90
80
70
60
50
40
30
20
0
50
100
150
Maximum Allowable
Heatsink Temperature (°C)
ST183C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
120
110
100
90
80
70
60
50
40
30
20
ST183C..C Series
(Double side cooled)
R
thJC
(DC) = 0.08 K/W
Ø
Ø
Conduction period
Conduction period
30° 60° 90°
120° 180°
DC
90°
30°
60°
120°
0
100
200
300
400
180°
DC
200
250
300
350
400
500
600
700
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
www.vishay.com
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94368
Revision: 30-Apr-08
ST183CPbF Series
Inverter Grade Thyristors
Vishay High Power Products
(Hockey PUK Version), 370 A
1000
900
5000
180°
120°
90°
60°
30°
RMS limit
4500
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average
On-State Power Loss (W)
700
600
500
400
300
200
100
0
0
50
Peak Half Sine Wave
On-State Current (A)
800
4000
3500
3000
2500
2000
0.01
Ø
Conduction angle
ST183C..C Series
T
J
= 125 °C
100 150 200 250 300 350 400 450
ST183C..C Series
0.1
1
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Maximum Average
On-State Power Loss (W)
1200
1000
800
600
400
200
0
0
100
DC
180°
120°
90°
60°
30°
RMS limit
Instantaneous On-State Voltage (A)
1400
10 000
ST183C..C Series
1000
T
J
= 25 °C
T
J
= 125 °C
Ø
Conduction period
ST183C..C Series
T
J
= 125 °C
200
300
400
500
600
700
100
1
1.5
2
2.5
3
3.5
4
4.5
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
4500
1
Peak Half Sine Wave On-State
Current (A)
4000
Z
thJ-hs
- Transient
Themal Impedance (K/W)
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
ST183C..C Series
0.1
3500
3000
0.01
2500
ST183C..C Series
2000
1
10
100
Steady state value
R
thJ-hs
= 0.17 K/W
(Single side cooled)
R
thJ-hs
= 0.08 K/W
(Double side cooled)
(DC operation)
0.01
0.1
1
10
0.001
0.001
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJC
Characteristics
Document Number: 94368
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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