N750CH26 datasheet, PDF - EEWORLD Datasheet

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N750CH26: DescriptionSilicon Controlled Rectifier, 3414.75 A, 2600 V, SCR; CategoryAnalog mixed-signal IC Trigger device; File Size238KB，4 Pages; ManufacturerIXYS

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N750CH26 Overview

Silicon Controlled Rectifier, 3414.75 A, 2600 V, SCR

N750CH26 Parametric

Parameter Name	Attribute value
Maker	IXYS
package instruction	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	350 mA
Maximum DC gate trigger voltage	4 V
Maximum holding current	1000 mA
JESD-30 code	O-CEDB-N2
Maximum leakage current	200 mA
On-state non-repetitive peak current	28000 A
Number of components	1
Number of terminals	2
Maximum on-state current	900000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum rms on-state current	3414.75 A
Maximum repetitive peak off-state leakage current	200000 µA
Off-state repetitive peak voltage	2600 V
Repeated peak reverse voltage	2600 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Trigger device type	SCR

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N750CH26 Related Products

	N750CH26	N750CH32	N750CH34	N750CH42	N750CH40	N750CH38
Description	Silicon Controlled Rectifier, 3414.75 A, 2600 V, SCR	Silicon Controlled Rectifier, 3414.75 A, 3200 V, SCR	Silicon Controlled Rectifier, 3414.75 A, 3400 V, SCR	Silicon Controlled Rectifier, 3414.75 A, 4200 V, SCR	Silicon Controlled Rectifier, 3414.75 A, 4000 V, SCR	Silicon Controlled Rectifier, 3414.75 A, 3800 V, SCR
package instruction	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow	unknown
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	200 V/us	200 V/us	200 V/us	200 V/us	200 V/us	200 V/us
Maximum DC gate trigger current	350 mA	350 mA	350 mA	350 mA	350 mA	350 mA
Maximum DC gate trigger voltage	4 V	4 V	4 V	4 V	4 V	4 V
Maximum holding current	1000 mA	1000 mA	1000 mA	1000 mA	1000 mA	1000 mA
JESD-30 code	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Maximum leakage current	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA
On-state non-repetitive peak current	28000 A	28000 A	28000 A	28000 A	28000 A	28000 A
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum on-state current	900000 A	900000 A	900000 A	900000 A	900000 A	900000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	3414.75 A	3414.75 A	3414.75 A	3414.75 A	3414.75 A	3414.75 A
Maximum repetitive peak off-state leakage current	200000 µA	200000 µA	200000 µA	200000 µA	200000 µA	200000 µA
Off-state repetitive peak voltage	2600 V	3200 V	3400 V	4200 V	4000 V	3800 V
Repeated peak reverse voltage	2600 V	3200 V	3400 V	4200 V	4000 V	3800 V
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END	END	END
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR

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