24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
| Parameter Name | Attribute value |
| Maker | Renesas Electronics Corporation |
| package instruction | FLANGE MOUNT, S-MSFM-P3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | RADIATION HARDENED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (ID) | 24 A |
| Maximum drain-source on-resistance | 0.11 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-254AA |
| JESD-30 code | S-MSFM-P3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | SQUARE |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 72 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
京公网安备 11010802033920号
EEWORLD
