Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of
Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed,
l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any
t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout
the express wri tten consent of Fuji El ect ric Co.,Lt d.
DATE
CHECKED
Sep.-27-'04
FMW21N60G
SPECIFICATION
Sep.-27-2004
Power MOSFET
MS5F5934
DWG.NO.
CHECKED
Sep.-27-'04
DRAWN
Sep.-27-'04
NAME
Date
Device Name
Type Name
Spec. No.
APPROVED
:
:
:
:
MS5F5934
1 / 19
a
H04-004-05
Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of
Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed,
l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any
t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout
the express wri tten consent of Fuji El ect ric Co.,Lt d.
2004
Date
Aug.-03
2005
Classification
Added
a
Added newpackage
types
enactment
Index
Content
Sep.-27
Revised Records
DWG.NO.
MS5F5934
Drawn Checked Checked Approved
2 / 19
a
H04-004-03
1.Scope
2.Construction
3.Applications
This specifies Fuji Power MOSFET FMW21N60G
N-Channel enhancement mode power MOSFET
for Switching
4.Type name and Ordering code
Type Name
FMW21N60G
Ordering code
FMW21N60G SC
FMW21N60G SC-K1
Country code
(Blank)
K1
Packaging
Assembly location
Japan
'Factory A' at Korea
5.Outview and Standard packing Specification
Package
Ordering code
Type
FMW21N60G SC
TO-247
FMW21N60G SC-K1
Out view
page 8/19
page 9/19
Standard packing
Specification
MS5Q0006
MS5Q0064
6.Absolute Maximum Ratings at Tc=25℃ (unless otherwise specified)
Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of
Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed,
l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any
t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout
the express wri tten consent of Fuji El ect ric Co.,Lt d.
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Maximum Power Dissipation
Operating and Storage
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AR
E
AS
dV
DS
/dt
dV/dt
P
D
T
ch
Characteristics
600
600
± 21
± 84
± 30
21
333.8
20
5
2.50
Unit
V
V
A
A
V
A
mJ
Remarks
VGS=-30V
Tch<=150℃
L=1.4mH
Vcc=60V *1
kV/
μ
s VDS<=600V
kV/μs *2
W
Ta=25℃
Tc=25℃
℃
℃
335
150
-55 to +150
Temperature range
T
stg
*1 See to Avalanche Energy Graph (Page 17/18)
*2 I
F
D
,-di/dt=50A/
μ
s,Vcc
DSS
,Tch
℃
-I
BV
150
MS5F5934
DWG.NO.
a
3 / 19
H04-004-03
7.Electrical Characteristics at Tc=25℃ (unless otherwise specified)
Static Ratings
Description
Symbol
Conditions
min.
typ.
I
D
=250μA
Drain-Source
V
GS
=0V
Breakdown Voltage BV
DSS
600
-
I
D
=250
μ
A
Gate Threshold
V
DS
=V
GS
Voltage V
GS
(th)
3.0
-
Zero Gate Voltage
Drain Current I
DSS
Gate-Source
Leakage Current I
GSS
Drain-Source
On-State Resistance R
DS
(on)
Forward
Transconductance g
fs
Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of
Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed,
l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any
t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout
the express wri tten consent of Fuji El ect ric Co.,Lt d.
max.
-
5.0
25
Unit
V
V
V
DS
=600V
T
ch
=25℃
V
GS
=0V
V
DS
=480V
T
ch
=125
℃
V
GS
=0V
V
GS
= ± 30V
V
DS
=0V
I
D
=8.5A
V
GS
=10V
I
D
=8.5A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
cc
=300V
V
GS
=10V
I
D
=8.5A
R
G
=10Ω
V
cc
=300V
I
D
=17A
V
GS
=10V
-
-
-
-
μA
250
-
-
10
-
-
-
-
-
-
-
-
-
-
10
0.29
20
2280
290
16
26
37
78
13
54
15
20
100
0.37
-
3420
435
24
39
56
117
19
81
23
30
nA
Ω
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer
Capacitance Crss
td(on)
Turn-On Time
tr
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Reverse Diode
Description
Avalanche Capability
td(off)
tf
Q
G
Q
GS
Q
GD
pF
ns
nC
Symbol
I
AV
Diode Forward
On-Voltage V
SD
Reverse Recovery
Time trr
Reverse Recovery
Charge Qrr
8.Thermal Resistance
Description
Channel to Case
Rth(ch-c)
Channel to Ambient
Rth(ch-a)
Conditions
L=1.4mH Tch=25℃
See Fig.1 and Fig.2
I
F
=17A
V
GS
=0V
T
ch
=25
℃
I
F
=17A
V
GS
=0V
-di/dt=100A/μs
T
ch
=25℃
min.
21
-
-
-
typ.
-
0.93
0.7
10.00
max.
-
1.50
-
-
Unit
A
V
μs
μ
C
Symbol
min.
typ.
max.
0.373
50.0
Unit
℃/W
℃
/W
MS5F5934
DWG.NO.
a
4 / 19
H04-004-03
Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of
Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed,
l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any
t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout
the express wri tten consent of Fuji El ect ric Co.,Lt d.
Fig.1 Test circuit
Fig.2 Operating waveforms
-15V
0
50Ω
+10V
D.U.T
DWG.NO.
IDP
L
MS5F5934
BV
DSS
V
GS
5 / 19
Vcc
I
D
V
DS
a
H04-004-03
京公网安备 11010802033920号
EEWORLD
