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DTA114WG-AN3-R

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size112KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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DTA114WG-AN3-R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3

DTA114WG-AN3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)24
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz

DTA114WG-AN3-R Preview

UNISONIC TECHNOLOGIES CO., LTD
DTA114W
Preliminary
PNP SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow positive input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
DTA114WL-AN3-R
DTA114WG-AN3-R
Note: Pin Assignment: G: GND I: IN O: OUT
Package
SOT-523
Pin Assignment
1
2
3
G
I
O
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 2
QW-R221-018,a
DTA114W
PARAMETER
Preliminary
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
SYMBOL
RATINGS
UNIT
Supply Voltage
V
CC
-50
V
Input Voltage
V
IN
-30 ~ +10
V
I
OUT
-100
Output Current
mA
I
C(MAX)
-100
Power Dissipation
P
D
150
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS
(T
A
=25°C)
SYMBOL
TEST CONDITIONS
V
IN(OFF)
V
CC
=-5V, I
OUT
=-100μA
Input Voltage
V
IN(ON)
V
OUT
=-0.3V, I
OUT
=-2mA
Output Voltage
V
OUT(ON)
I
OUT
/I
IN
=10mA/-0.5mA
Input Current
I
IN
V
IN
=-5V
Output Current
I
OUT(OFF)
V
CC
=-50V, V
IN
=0V
DC Current Gain
G
IN
V
OUT
=-5V, I
OUT
=-10mA
Input Resistance
R
1
Resistance Ratio
R
2
/R
1
Transition Frequency
f
T
V
CE
=-10V, I
E
=5mA, f=100MHz (Note)
Note: Transition frequency of the device
PARAMETER
MIN
-3
-0.1
-0.3
-0.88
-0.5
13
0.57
TYP
MAX
-0.8
UNIT
V
V
mA
μA
KΩ
MHz
24
7
0.37
10
0.47
250
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 2
QW-R221-018,a

DTA114WG-AN3-R Related Products

DTA114WG-AN3-R DTA114WL-AN3-R
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE PACKAGE-3
Is it Rohs certified? conform to conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 24 24
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz
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