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MBRD1040-T

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, PLASTIC, DPAK-3
CategoryDiscrete semiconductor    diode   
File Size67KB,3 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

MBRD1040-T Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, PLASTIC, DPAK-3

MBRD1040-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeDPAK
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS, FREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.41 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40

MBRD1040-T Preview

MBRD1040
10A LOW VF SCHOTTKY BARRIER RECTIFIER
SPICE MODEL: MBRD1040
Features
NEW PRODUCT
·
·
·
·
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Maximum Junction Temperature Rating
Very Low Forward Voltage Drop
Very Low Leakage Current
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
A
P
4
E
G
H
J
DPAK
Dim
A
B
C
D
E
G
H
J
Min
6.3
¾
0.3
2.1
0.4
1.2
5.3
1.3
1.0
5.1
Max
6.7
10
0.8
2.5
0.6
1.6
5.7
1.8
¾
5.5
B
1
2
3
2.3 Nominal
Mechanical Data
·
·
·
·
·
Case: DPAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking Information: See Page 2
Weight: 0.4 grams (approx.)
M
D
C
PIN 1
PIN 3
K
L
PIN 4, BOTTOMSIDE
HEAT SINK
K
L
M
P
0.5 Nominal
Note:
Pins 1 & 3 must be electrically
connected at the printed circuit board.
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Also see Figure 4)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Typical Thermal Resistance Junction to Case
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
R
qJC
R
qJA
T
j
T
STG
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
FM
I
RM
C
j
Min
40
¾
¾
¾
¾
¾
¾
Typ
¾
0.45
¾
0.47
0.1
12.5
700
Max
¾
0.49
0.41
0.51
0.3
25
¾
Unit
V
V
mA
pF
Test Condition
I
R
= 1mA
I
F
= 8A, T
S
= 25°C
I
F
= 8A, T
S
= 125°C
I
F
= 10A, T
S
= 25°C
T
S
= 25°C, V
R
= 35V
T
S
= 100°C, V
R
= 35V
f = 1.0MHz, V
R
= 4.0V DC
Value
40
28
10
100
6.0
80
-65 to +150
-65 to +150
Unit
V
V
A
A
°C/W
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Peak Reverse Current (Note 1)
Junction Capacitance
Notes:
1. Short duration test pulse used to minimize self-heating effect.
DS30282 Rev. 3 - 2
1 of 3
www.diodes.com
MBRD1040
ã
Diodes Incorporated
Ordering Information
(Note 2)
NEW PRODUCT
Device
MBRD1040-T
Notes:
Packaging
DPAK
Shipping
2500/Tape & Reel
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MBRD1040 = Product type marking code
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
YWW
MBRD1040
100
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
1000
T
A
= +150ºC
10
T
A
= +150°C
100
1
T
A
= +25°C
10
T
A
= +100ºC
0.1
1
0.01
T
A
= +75°C
T
A
= +75ºC
0.001
0.1
T
A
= +25ºC
0.0001
0
100
200
300
400
500
600
V
F
, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics
10,000
0.01
0
5
10
15
20
25
30
35
40
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
12
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
C
j
, JUNCTION CAPACITANCE (pF)
f = 1MHz
Note 3
10
8
Note 4
1000
6
Note 5
4
2
0
-25
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 4 DC Forward Current Derating
100
0
5
10
15
20
25
30
35
40
V
R
, REVERSE VOLTAGE (V)
Fig. 3 Typical Junction Capacitance vs. Reverse Voltage
DS30282 Rev. 3 - 2
2 of 3
www.diodes.com
MBRD1040
P
F(AV)
, AVERAGE FORWARD POWER DISSIPATION (W)
8
7
6
5
DC
4
3
2
1
0
0
3 4.5 6 7.5 9 10.5 12 13.5 15
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation (Per Element)
1.5
Note 6
T
j
= 150°C
Note 7
NEW PRODUCT
Notes:
3. T
A
= T
SOLDERING POINT
, R
qJC
= 6.0°C/W, R
qCA
= 0°C/W.
4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. R
qJA
in range of 15-30°C/W.
5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
qJA
in range of
60-75°C/W.
6. Maximum power disspiation when the device is mounted in accordance to the conditions described in Note 5.
7. Maximum power disspation when the device is mounted in accordance to the conditions described in Note 4.
DS30282 Rev. 3 - 2
3 of 3
www.diodes.com
MBRD1040
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