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D2SB80C2G

Description
Bridge Rectifier Diode, 2A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size188KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

D2SB80C2G Overview

Bridge Rectifier Diode, 2A, 800V V(RRM),

D2SB80C2G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage800 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-T4
JESD-609 codee3
Maximum non-repetitive peak forward current80 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
D2SB05 thru D2SB80
Taiwan Semiconductor
CREAT BY ART
FEATURES
Glass Passivated Single-Phase Bridge Rectifier
- Ideal for printed circuit board
- High case dielectric strength
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
GBL
MECHANICAL DATA
Case:
GBL
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
2 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-
wave superimposed on rated load
Rating of fusing ( t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 2 A
Maximum reverse current @ rated VR
T
J
=25
o
C
T
J
=125
o
C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θjL
R
θjA
T
J
T
STG
D2SB D2SB D2SB D2SB D2SB D2SB
05
50
35
50
10
100
70
100
20
200
140
200
2
80
26
1.1
10
500
10
47
- 55 to +150
- 55 to +150
O
o
40
400
280
400
60
600
420
600
80
800
560
800
UNIT
V
V
V
A
A
A
2
s
V
μA
C/W
O
O
C
C
Document Number: DS_D1408052
Version: I14
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