Semiconductor
SMK0860P
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
•
High Voltage: BV
DSS
=600V(Min.)
•
Low C
rss
: C
rss
=9.7pF(Typ.)
•
Low gate charge : Qg=22nC(Typ.)
•
Low R
DS(on)
:R
DS(on)
=1.2Ω(Max.)
PIN Connection
D
G
Ordering Information
Type No.
SMK0860P
Marking
SMK0860
Package Code
TO-220AB-3L
GDS
TO-220AB-3L
S
Absolute maximum ratings
(T
C
=25°C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
*
Symbol
V
DSS
V
GSS
I
D
(Tc=25℃)
(Tc=100℃)
I
DM
P
D
②
②
①
①
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
600
±30
7.5
4.7
30
90
7.5
325
7.5
21.7
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Drain power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-a)
Typ.
-
-
Max
1.38
62.5
Unit
℃/W
KSD-T0P024-000
1
SMK0860P
Electrical Characteristics
(
T
C
=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250μA, V
GS
=0
I
D
=250μA, V
DS
= V
GS
V
DS
=600V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=3.75A
V
DS
=10V, I
D
=3.75A
V
GS
=0V, V
DS
=25V
f=1MHz
Min.
600
2.0
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
1.0
7.3
968
105
9.7
18
19
72
28
22
5.2
6.3
Max.
-
4.0
1
±100
1.2
-
1210
131
12.1
-
-
-
-
27
-
-
Unit
V
V
μA
nA
Ω
S
pF
V
DD
=300V, I
D
=7.5A
R
G
=25Ω
-
③
④
-
-
ns
V
DS
=480V, V
GS
=10V
I
D
=7.5A
-
③
④
-
-
nC
Source-Drain Diode Ratings and Characteristics
(
T
C
=25°C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=7.5A
I
s
=7.5A, V
GS
=0,
di
S
/dt=100A/us
Min
-
-
-
-
-
Typ
-
-
-
365
3.4
Max
7.5
30
1.4
-
-
Unit
A
V
ns
uC
Note ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=10.6mH, I
AS
=7.5A, V
DD
=50V, R
G
=27Ω
③
Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④
Essentially independent of operating temperature
KSD-T0P024-000
2
SMK0860P
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
V
GS
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
Buttom: 4.0V
Top
Fig. 2 I
D
- V
GS
℃
-
Fig. 3 R
DS(on)
- I
D
℃
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
Fig.6 V
GS
- Q
G
℃
KSD-T0P024-000
3
SMK0860P
Electrical Characteristic Curves
Fig. 7 V
DSS
- T
J
Fig.8 R
DS(on)
- T
J
C
C
Fig. 9 I
D
- T
C
Fig. 10 Safe Operating Area
*
KSD-T0P024-000
4
SMK0860P
Fig. 10 Gate Charge Test Circuit & Waveform
Fig. 11 Resistive Switching Test Circuit & Waveform
Fig. 12 E
AS
Test Circuit & Waveform
KSD-T0P024-000
5
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