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NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
General purpose switching and linear amplification,
especially in portable equipment.
DESCRIPTION
handbook, halfpage
PMST4401
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST4403.
MARKING
TYPE NUMBER
PMST4401
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
∗2X
1
Top view
2
MAM062
3
1
2
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
60
40
6
600
600
200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 22
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°C
I
C
= 0; V
EB
= 6 V
V
CE
= 1 V; (see Fig.2)
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 150 mA; note 1
DC current gain
V
CEsat
V
BEsat
C
c
C
e
f
T
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 500 mA; V
CE
= 2 V; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
E
= i
e
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 20 mA; V
CE
= 10 V; f = 100 MHz
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA
20
40
80
100
40
−
−
−
−
−
−
250
−
−
−
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMST4401
VALUE
625
UNIT
K/W
MAX.
50
10
50
−
−
−
300
−
400
750
950
1.2
8
30
−
UNIT
nA
µA
nA
mV
mV
mV
V
pF
pF
MHz
Switching times (between 10% and 90% levels);
(see Fig.3)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
35
15
20
250
200
60
ns
ns
ns
ns
ns
ns
1999 Apr 22
3
NXP Semiconductors
Product data sheet
NPN switching transistor
PMST4401
handbook, full pagewidth
300
MGD811
hFE
VCE = 1 V
200
100
0
10
−1
1
10
10
2
IC mA
10
3
Fig.2 DC current gain; typical values.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 9.5 V; T = 500
µs;
t
p
=
10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
=
−3.5
V; V
CC
= 29.5 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
1999 Apr 22
4
Embedded System
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