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BYQ30EB-100

Description
DIODE 16 A, 100 V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size49KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYQ30EB-100 Overview

DIODE 16 A, 100 V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3, Rectifier Diode

BYQ30EB-100 Parametric

Parameter NameAttribute value
MakerNXP
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current110 A
Number of components1
Phase1
Number of terminals2
Maximum output current16 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.025 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
GENERAL DESCRIPTION
Glass passivated high efficiency
rugged dual rectifier diodes in a
plastic envelope suitable for surface
mounting, featuring low forward
voltage drop, ultra-fast recovery
times
and
soft
recovery
characteristic. These devices can
withstand reverse voltage transients
and have guaranteed reverse surge
and ESD capability. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
BYQ30EB series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
t
rr
I
RRM
PARAMETER
BYQ30EB-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
Repetitive peak reverse
current per diode
MAX.
100
100
0.95
16
25
0.2
MAX.
150
150
0.95
16
25
0.2
MAX.
200
200
0.95
16
25
0.2
UNIT
V
V
A
ns
A
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
no connection
cathode
anode
cathode
PIN CONFIGURATION
mb
SYMBOL
k
tab
2
1
3
a
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Output current (both diodes
conducting)
1
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
square wave
δ
= 0.5; T
mb
104 ˚C
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
16
23
16
100
110
50
0.2
0.2
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
2
s
A
A
˚C
˚C
I
2
t
I
RRM
I
RSM
T
stg
T
j
t = 25
µs; δ
= 0.5;
T
mb
104 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
2
I t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
1
Neglecting switching and reverse current losses.
October 1997
1
Rev 1.000
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