74AUP1GU04
Low-power unbuffered inverter
Rev. 4 — 16 November 2011
Product data sheet
1. General description
The 74AUP1GU04 provides the single unbuffered inverting gate.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
2. Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
ESD protection:
HBM JESD22-A114F Class 3A. Exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; I
CC
= 0.9
A
(maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Multiple package options
Specified from
40 C
to +85
C
and
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74AUP1GU04GW
74AUP1GU04GM
74AUP1GU04GF
74AUP1GU04GN
74AUP1GU04GS
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
Name
TSSOP5
XSON6
XSON6
XSON6
XSON6
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
Version
SOT353-1
Type number
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
1.45
0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
1
0.5 mm
extremely thin small outline package; no leads;
6 terminals; body 0.9
1.0
0.35 mm
extremely thin small outline package; no leads;
6 terminals; body 1.0
1.0
0.35 mm
SOT1115
SOT1202
NXP Semiconductors
74AUP1GU04
Low-power unbuffered inverter
4. Marking
Table 2.
Marking
Marking code
[1]
pD
pD
pD
pD
pD
Type number
74AUP1GU04GW
74AUP1GU04GM
74AUP1GU04GF
74AUP1GU04GN
74AUP1GU04GS
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
V
CC
540
Ω
50
Ω
A
2
A
Y
4
2
1
4
Y
mna108
mna109
001aad073
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram
6. Pinning information
6.1 Pinning
74AUP1GU04
74AUP1GU04
n.c.
A
1
2
GND
GND
3
001aaf167
n.c.
5
V
CC
1
6
V
CC
n.c.
A
74AUP1GU04
1
2
3
6
5
4
V
CC
n.c.
Y
A
2
5
n.c.
3
4
Y
GND
4
Y
001aaf168
001aaf169
Transparent top view
Transparent top view
Fig 4.
Pin configuration
SOT353-1
Fig 5.
Pin configuration SOT886
Fig 6.
Pin configuration SOT891,
SOT1115 and SOT1202
74AUP1GU04
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 16 November 2011
2 of 19
NXP Semiconductors
74AUP1GU04
Low-power unbuffered inverter
6.2 Pin description
Table 3.
Symbol
n.c.
A
GND
Y
n.c.
V
CC
Pin description
Pin
TSSOP5
1
2
3
4
-
5
XSON6
1
2
3
4
5
6
not connected
data input A
ground (0 V)
data output Y
not connected
supply voltage
Description
7. Functional description
Table 4.
Input
A
L
H
[1]
H = HIGH voltage level; L = LOW voltage level.
Function table
[1]
Output
Y
H
L
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
0.5
50
0.5
50
[1]
Max
+4.6
-
+4.6
-
V
CC
+ 0.5
20
+50
-
+150
250
Unit
V
mA
V
mA
V
mA
mA
mA
C
mW
V
O
< 0 V
V
O
= 0 V to V
CC
0.5
-
-
50
65
T
amb
=
40 C
to +125
C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP5 packages: above 87.5
C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 118
C
the value of P
tot
derates linearly with 7.8 mW/K.
74AUP1GU04
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 16 November 2011
3 of 19
NXP Semiconductors
74AUP1GU04
Low-power unbuffered inverter
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
t/V
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 0.8 V to 3.6 V
Conditions
Min
0.8
0
0
40
0
Max
3.6
3.6
V
CC
+125
200
Unit
V
V
V
C
ns/V
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
C
V
IH
V
IL
V
OH
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
V
CC
= 0.8 V to 3.6 V
V
CC
= 0.8 V to 3.6 V
I
O
=
20 A;
V
CC
= 0.8 V to 3.6 V
I
O
=
1.1
mA; V
CC
= 1.1 V
I
O
=
1.7
mA; V
CC
= 1.4 V
I
O
=
1.9
mA; V
CC
= 1.65 V
I
O
=
2.3
mA; V
CC
= 2.3 V
I
O
=
3.1
mA; V
CC
= 2.3 V
I
O
=
2.7
mA; V
CC
= 3.0 V
I
O
=
4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
I
O
= 20
A;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
CC
C
I
C
O
input leakage current
supply current
input capacitance
output capacitance
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
V
O
= GND; V
CC
= 0 V
0.75
V
CC
-
-
V
CC
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
1.8
-
-
-
-
-
-
-
-
-
0.1
0.3
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
0.1
0.5
-
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
pF
pF
0.25
V
CC
V
Conditions
Min
Typ
Max
Unit
0.75
V
CC
-
74AUP1GU04
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 16 November 2011
4 of 19
NXP Semiconductors
74AUP1GU04
Low-power unbuffered inverter
Table 7.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
40 C
to +85
C
V
IH
V
IL
V
OH
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
V
CC
= 0.8 V to 3.6 V
V
CC
= 0.8 V to 3.6 V
I
O
=
20 A;
V
CC
= 0.8 V to 3.6 V
I
O
=
1.1
mA; V
CC
= 1.1 V
I
O
=
1.7
mA; V
CC
= 1.4 V
I
O
=
1.9
mA; V
CC
= 1.65 V
I
O
=
2.3
mA; V
CC
= 2.3 V
I
O
=
3.1
mA; V
CC
= 2.3 V
I
O
=
2.7
mA; V
CC
= 3.0 V
I
O
=
4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
I
O
= 20
A;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
CC
input leakage current
supply current
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
CC
= 0.8 V to 3.6 V
V
CC
= 0.8 V to 3.6 V
I
O
=
20 A;
V
CC
= 0.8 V to 3.6 V
I
O
=
1.1
mA; V
CC
= 1.1 V
I
O
=
1.7
mA; V
CC
= 1.4 V
I
O
=
1.9
mA; V
CC
= 1.65 V
I
O
=
2.3
mA; V
CC
= 2.3 V
I
O
=
3.1
mA; V
CC
= 2.3 V
I
O
=
2.7
mA; V
CC
= 3.0 V
I
O
=
4.0
mA; V
CC
= 3.0 V
0.75
V
CC
-
-
V
CC
0.1
0.7
V
CC
1.03
1.30
1.97
1.85
2.67
2.55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.3
V
CC
0.37
0.35
0.33
0.45
0.33
0.45
0.5
0.9
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
0.25
V
CC
V
Conditions
Min
Typ
Max
Unit
T
amb
=
40 C
to +125
C
V
IH
V
IL
V
OH
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
0.75
V
CC
-
-
0.6
V
CC
0.93
1.17
1.77
1.67
2.40
2.30
-
-
-
-
-
-
-
-
V
CC
0.11 -
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
V
0.25
V
CC
V
74AUP1GU04
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 16 November 2011
5 of 19
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