BAT54CV
Two Schottky barrier double diodes
Rev. 3 — 15 November 2010
Product data sheet
1. Product profile
1.1 General description
Two planar Schottky barrier double diodes with common cathodes and an integrated
guard ring for stress protection encapsulated in a SOT666 ultra small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Low forward voltage
Low capacitance
AEC-Q101 qualified
Ultra small and flat lead SMD plastic package
Excellent coplanarity and improved thermal behavior
1.3 Applications
Ultra high-speed switching
Voltage clamping
Line termination
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
Per diode
I
F
V
R
V
F
forward current
reverse voltage
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
[1]
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
[1]
Quick reference data
Parameter
Conditions
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
Max
200
30
240
320
400
500
800
Unit
mA
V
mV
mV
mV
mV
mV
Nexperia
BAT54CV
Two Schottky barrier double diodes
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
anode (diode 1)
anode (diode 2)
common cathode (diode 3, 4)
anode (diode 3)
anode (diode 4)
common cathode (diode 1, 2)
1
2
3
1
2
3
sym057
Simplified outline
6
5
4
Graphic symbol
6
5
4
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT54CV
-
Description
plastic surface-mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4.
BAT54CV
Marking codes
Marking code
C5
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FRM
I
FSM
reverse voltage
forward current
repetitive peak
forward current
non-repetitive peak
forward current
t
p
≤
10 ms;
δ ≤
0.5
square wave;
t
p
= 8.3 ms
[1]
Parameter
Conditions
Min
-
-
-
-
Max
30
200
0.85
2
Unit
V
mA
A
A
BAT54CV
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 15 November 2010
2 of 10
Nexperia
BAT54CV
Two Schottky barrier double diodes
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
≤
25
°C
[2]
[3]
[4]
Min
Max
Unit
Per device, one diode loaded
-
-
-
−65
−65
350
420
125
+125
+150
mW
mW
°C
°C
°C
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
junction temperature
ambient temperature
storage temperature
T
j
= 25
°C
prior to surge.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
Conditions
[1][2]
[3]
[4]
Min
Typ
Max
Unit
Per device, one diode loaded
thermal resistance from in free air
junction to ambient
thermal resistance from
junction to solder point
-
-
-
-
-
-
360
300
175
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
[5]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
BAT54CV
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 15 November 2010
3 of 10
Nexperia
BAT54CV
Two Schottky barrier double diodes
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
[1]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
240
320
400
500
800
2
10
mV
mV
mV
mV
mV
μA
pF
reverse current
diode capacitance
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
R
= 25 V
V
R
=1 V; f =1 MHz
10
3
I
F
(mA)
10
2
(1) (2) (3)
msa892
10
3
I
R
(μA)
10
2
(2)
(1)
msa893
10
10
1
(1)
(2) (3)
1
(3)
10
−1
0
0.4
0.8
V
F
(V)
1.2
10
−1
0
10
20
V
R
(V)
30
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
BAT54CV
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 15 November 2010
4 of 10
Nexperia
BAT54CV
Two Schottky barrier double diodes
15
C
d
(pF)
msa891
10
5
0
0
10
20
V
R
(V)
30
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
9. Package outline
1.7
1.5
6
5
4
0.3
0.1
1.7
1.5
1.3
1.1
pin 1 index
0.6
0.5
1
0.5
1
Dimensions in mm
2
3
0.27
0.17
0.18
0.08
04-11-08
Fig 4.
Package outline BAT54CV (SOT666)
BAT54CV
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 15 November 2010
5 of 10
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