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NXP Semiconductors
Product data sheet
PNP general purpose transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 60 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
1
handbook, halfpage
BCW89
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
MARKING
TYPE NUMBER
BCW89
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
MARKING CODE
(1)
H3∗
Top view
MAM256
2
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base; I
C
=
−2
mA
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−80
−60
−5
−100
−200
−200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 15
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board
.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−20
V
I
E
= 0; V
CB
=
−20
V; T
j
= 100
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−10 μA;
V
CE
=
−5
V
I
C
=
−2
mA; V
CE
=
−5
V
collector-emitter saturation voltage I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−50
mA; I
B
=
−2.5
mA
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−50
mA; I
B
=
−2.5
mA
I
C
=
−2
mA; V
CE
=
−5
V
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−200 μA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN.
−
−
−
−
120
−
−
−
−
−600
−
−
TYP.
−
−
−
90
−
−80
−150
−720
−810
−
4.5
150
−
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
500
BCW89
UNIT
K/W
MAX. UNIT
−100
−10
−100
−
260
−300
−
−
−
−750
−
−
10
mV
mV
mV
mV
mV
pF
MHz
dB
nA
μA
nA
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz
−
1999 Apr 15
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BCW89
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 Apr 15
4