BSN20BK datasheet, PDF - EEWORLD Datasheet

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BSN20BK: DescriptionSmall Signal Field-Effect Transistor, 0.265A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size275KB，16 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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BSN20BK Overview

Small Signal Field-Effect Transistor, 0.265A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

BSN20BK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	PLASTIC PACKAGE-3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.265 A
Maximum drain-source on-resistance	3.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	7 pF
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Guideline	IEC-60134
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSN20BK

18 December 2014

60 V, N-channel Trench MOSFET

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

•

Logic-level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection: 2 kV HBM

3. Applications

•

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

drain-source voltage

gate-source voltage

drain current

= 10 V; T

amb

= 25 °C

= 10 V; T

= 25 °C

Static characteristics

DSon

drain-source on-state

resistance

[1]

Conditions

= 25 °C

Min

-20

Typ

Max

265

330

Unit

= 10 V; I

= 200 mA; T

= 25 °C

2.1

2.8

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .

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BSN20BK Related Products

	BSN20BK
Description	Small Signal Field-Effect Transistor, 0.265A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	PLASTIC PACKAGE-3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.265 A
Maximum drain-source on-resistance	3.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	7 pF
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Guideline	IEC-60134
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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