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P6
BSS84AKS
50 V, 160 mA dual P-channel Trench MOSFET
Rev. 1 — 23 May 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; I
D
= -100 mA;
T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
Typ
-
-
-
4.5
Max Unit
-50
20
V
V
Per transistor
-160 mA
7.5
Ω
Static characteristics (per transistor)
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
2
.
NXP Semiconductors
BSS84AKS
50 V, 160 mA dual P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1
G1
D2
S2
G2
D1
source 1
gate 1
drain 2
source 2
gate 2
drain 1
1
2
3
G1
G2
6
5
4
D1
D2
Simplified outline
Graphic symbol
SOT363 (TSSOP6)
S1
S2
sym147
3. Ordering information
Table 3.
Ordering information
Package
Name
BSS84AKS
TSSOP6
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
%VY
Type number
BSS84AKS
[1]
% = placeholder for manufacturing site code
BSS84AKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
2 of 17
NXP Semiconductors
BSS84AKS
50 V, 160 mA dual P-channel Trench MOSFET
5. Limiting values
Table 5.
Symbol
Per transistor
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
Per device
P
tot
T
j
T
amb
T
stg
I
S
V
ESD
[1]
[2]
[3]
[2]
[1]
[1]
[1]
Limiting values
Parameter
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
[2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Max
-50
20
-160
-100
-640
280
320
990
445
150
150
150
-160
1000
Unit
V
V
mA
mA
mA
mW
mW
mW
mW
°C
°C
°C
mA
V
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
T
amb
= 25 °C
-
-55
-55
-65
Source-drain diode
T
amb
= 25 °C
HBM
[1]
-
-
ESD maximum rating
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
BSS84AKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
3 of 17
NXP Semiconductors
BSS84AKS
50 V, 160 mA dual P-channel Trench MOSFET
120
P
der
(%)
80
001aao121
120
I
der
(%)
80
001aao122
40
40
0
-75
-25
25
75
125
T
j
(°C)
175
0
-75
-25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
-1
Fig 2.
Normalized continuous drain current as a
function of junction temperature
001aao139
(1)
I
D
(A)
(2)
-10
-1
(3)
(4)
-10
-2
(5)
(6)
-10
-3
-10
-1
-1
-10
V
DS
(V)
-10
2
I
DM
is single pulse
(1) t
p
= 100
μs
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) DC; T
sp
= 25 °C
(5) t
p
= 100 ms
(6) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
BSS84AKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
4 of 17
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