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M29W040-200N6

Description
512KX8 FLASH 3V PROM, 200ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32
Categorystorage    storage   
File Size206KB,31 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M29W040-200N6 Overview

512KX8 FLASH 3V PROM, 200ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32

M29W040-200N6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction8 X 20 MM, PLASTIC, TSOP-32
Contacts32
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time200 ns
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length18.4 mm
memory density4194304 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size8
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size64K
Maximum standby current0.000005 A
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width8 mm
M29W040
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
NOT FOR NEW DESIGN
M29W040 is replaced by the M29W040B
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 100ns
BYTE PROGRAMMING TIME: 12µs typical
ERASE TIME
– Block: 1.5 sec typical
– Chip: 2.5 sec typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Data Polling and Toggle bits Protocol for
P/E.C. Status
MEMORY ERASE in BLOCKS
– 8 Uniform Blocks of 64 KBytes each
– Block Protection
– Multiblock Erase
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
– Read mode: 8mA typical (at 12MHz)
– Stand-by mode: 20µA typical
– Automatic Stand-by mode
POWER DOWN SOFTWARE COMMAND
– Power-down mode: 1µA typical
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
Table 1. Signal Names
A0-A18
DQ0-DQ7
E
G
W
V
CC
V
SS
Address Inputs
Data Input / Outputs
Chip Enable
Output Enable
Write Enable
Supply Voltage
Ground
PLCC32 (K)
TSOP32 (N)
8 x 20mm
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
VCC
19
A0-A18
8
DQ0-DQ7
W
E
G
M29W040
VSS
AI02074
November 1999
This is information on a product still in productionbut not recommended for new designs.
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