VG26VS65165BT-4 datasheet, PDF

VG26VS65165BT-4: DescriptionEDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50; Categorystorage storage; File Size2MB，31 Pages; ManufacturerVanguard International Semiconductor Corporation; Websitehttp://www.vis.com.tw/

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VG26VS65165BT-4 Overview

EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

Parameter Name	Attribute value
Maker	Vanguard International Semiconductor Corporation
Parts packaging code	TSOP2
package instruction	TSOP2,
Contacts	50
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	40 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
JESD-30 code	R-PDSO-G50
length	20.95 mm
memory density	67108864 bit
Memory IC Type	EDO DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	50
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
width	10.16 mm

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