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VG26VS64165BT-4

Description
EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
Categorystorage    storage   
File Size2MB,31 Pages
ManufacturerVanguard International Semiconductor Corporation
Websitehttp://www.vis.com.tw/
Download Datasheet Parametric View All

VG26VS64165BT-4 Overview

EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

VG26VS64165BT-4 Parametric

Parameter NameAttribute value
MakerVanguard International Semiconductor Corporation
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts50
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time40 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
JESD-30 codeR-PDSO-G50
length20.95 mm
memory density67108864 bit
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals50
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
width10.16 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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