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MT46H128M32L4MA-75AT:A

Description
DDR DRAM, 128MX32, 6ns, CMOS, PBGA168, 12 X 12 MM, GREEN, PLASTIC, WFBGA-168
Categorystorage    storage   
File Size3MB,106 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
Download Datasheet Parametric View All

MT46H128M32L4MA-75AT:A Overview

DDR DRAM, 128MX32, 6ns, CMOS, PBGA168, 12 X 12 MM, GREEN, PLASTIC, WFBGA-168

MT46H128M32L4MA-75AT:A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionVFBGA,
Contacts168
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeS-PBGA-B168
JESD-609 codee1
length12 mm
memory density4294967296 bit
Memory IC TypeDDR DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals168
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize128MX32
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeSQUARE
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height0.7 mm
self refreshYES
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width12 mm
2Gb: x16, x32 Mobile LPDDR SDRAM
Features
Mobile Low-Power DDR SDRAM
MT46H128M16LF – 32 Meg x 16 x 4 Banks
MT46H64M32LF – 16 Meg x 32 x 4 Banks
MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2
MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4
MT46H256M32R4 – 32 Meg x 16 x 4 Banks x 4
Features
V
DD
/V
DDQ
= 1.70–1.95V
Bidirectional data strobe per byte of data (DQS)
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
4 internal banks for concurrent operation
Data masks (DM) for masking write data; one mask
per byte
Programmable burst lengths (BL): 2, 4, 8, or 16
Concurrent auto precharge option is supported
Auto refresh and self refresh modes
1.8V LVCMOS-compatible inputs
Temperature-compensated self refresh (TCSR)
Partial-array self refresh (PASR)
Deep power-down (DPD)
Status read register (SRR)
Selectable output drive strength (DS)
Clock stop capability
64ms refresh; 32ms for the automotive temperature
range
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-54
-6
-75
Clock Rate
200 MHz
185 MHz
166 MHz
133 MHz
Access Time
5.0ns
5.0ns
5.0ns
6.0ns
Options
V
DD
/V
DDQ
1.8V/1.8V
Configuration
128 Meg x 16 (32 Meg x 16 x 4 banks)
64 Meg x 32 (16 Meg x 32 x 4 banks)
Addressing
JEDEC-standard
Reduced page-size
1
4-die stack reduced page-size
2
2-die stack standard
4-die stack standard
Plastic "green" package
60-ball VFBGA (10mm x 11.5mm)
3
90-ball VFBGA (10mm x 13mm)
4
PoP (plastic "green" package)
168-ball VFBGA (12mm x 12mm)
4
168-ball WFBGA (12mm x 12mm)
4
168-ball WFBGA (12mm x 12mm)
4
240-ball WFBGA (14mm x 14mm)
4
Timing – cycle time
5ns @ CL = 3 (200 MHz)
5.4ns @ CL = 3 (185 MHz)
6ns @ CL = 3 (166 MHz)
7.5ns @ CL = 3 (133 MHz)
Power
Standard I
DD2
/I
DD6
Operating temperature range
Commercial (0˚ to +70˚C)
Industrial (–40˚C to +85˚C)
Automotive (–40˚C to +105˚C)
1
Design revision
Notes:
1.
2.
3.
4.
Marking
H
128M16
64M32
LF
LG
R4
L2
L4
CK
CM
JV
KQ
MA
MC
-5
-54
-6
-75
None
None
IT
AT
:A
Contact factory for availability.
Available in the 168-ball JV package only.
Available only for x16 configuration.
Available only for x32 configuration.
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.
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