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K4S280832E-TC7C

Description
Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Categorystorage    storage   
File Size60KB,11 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4S280832E-TC7C Overview

Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

K4S280832E-TC7C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2, TSOP54,.46,32
Contacts54
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
JESD-609 codee0
length22.22 mm
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals54
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP54,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8
Maximum standby current0.002 A
Maximum slew rate0.22 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
width10.16 mm
K4S280832E
CMOS SDRAM
128Mbit SDRAM
4M x 8Bit x 4 Banks
Synchronous DRAM
LVTTL
Rev. 1.0
Nov. 2002
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.0 Nov. 2002

K4S280832E-TC7C Related Products

K4S280832E-TC7C K4S280832E-TL7C
Description Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Is it Rohs certified? incompatible incompatible
Maker SAMSUNG SAMSUNG
Parts packaging code TSOP2 TSOP2
package instruction TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32
Contacts 54 54
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5.4 ns 5.4 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz 133 MHz
I/O type COMMON COMMON
interleaved burst length 1,2,4,8 1,2,4,8
JESD-30 code R-PDSO-G54 R-PDSO-G54
JESD-609 code e0 e0
length 22.22 mm 22.22 mm
memory density 134217728 bit 134217728 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 8 8
Number of functions 1 1
Number of ports 1 1
Number of terminals 54 54
word count 16777216 words 16777216 words
character code 16000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 16MX8 16MX8
Output characteristics 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2
Encapsulate equivalent code TSOP54,.46,32 TSOP54,.46,32
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
power supply 3.3 V 3.3 V
Certification status Not Qualified Not Qualified
refresh cycle 4096 4096
Maximum seat height 1.2 mm 1.2 mm
self refresh YES YES
Continuous burst length 1,2,4,8 1,2,4,8
Maximum standby current 0.002 A 0.002 A
Maximum slew rate 0.22 mA 0.22 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount YES YES
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal pitch 0.8 mm 0.8 mm
Terminal location DUAL DUAL
width 10.16 mm 10.16 mm
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