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K3N7V1000C-GC12

Description
MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
Categorystorage    storage   
File Size48KB,3 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

K3N7V1000C-GC12 Overview

MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44

K3N7V1000C-GC12 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeSOIC
package instructionSOP, SOP44,.63
Contacts44
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time120 ns
Spare memory width8
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length28.5 mm
memory density67108864 bit
Memory IC TypeMASK ROM
memory width16
Number of functions1
Number of terminals44
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP44,.63
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height3.1 mm
Maximum standby current0.00003 A
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12.6 mm
K3N7V(U)1000C-GC
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
FEATURES
Switchable organization
8,388,608 x 8(byte mode)
4,194,304 x 16(word mode)
Fast access time
3.3V Operation : 100ns(Max.)@C
L
=50pF,
120ns(Max.)@C
L
=100pF
3.0V Operation : 120ns(Max.)@C
L
=100pF
Supply voltage : single +3.3V/ single +3.0V
Current consumption
Operating : 40mA(Max.)
Standby : 30µA(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. K3N7V(U)1000C-GC : 44-SOP-600
CMOS MASK ROM
GENERAL DESCRIPTION
The K3N7V(U)1000C-GC is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 8,388,608 x 8 bit(byte mode) or as
4,194,304 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The K3N7V(U)1000C-GC is packaged in a 44-SOP.
FUNCTIONAL BLOCK DIAGRAM
A
21
.
.
.
.
.
.
.
.
A
0
A
-1
. . .
CE
OE
BHE
CONTROL
LOGIC
Q
0
/Q
8
Q
7
/Q
15
PIN CONFIGURATION
X
BUFFERS
AND
DECODER
MEMORY CELL
MATRIX
(4,194,304x16/
8,388,608x8)
A
21
A
18
A
17
A
7
A
6
A
5
1
2
3
4
5
6
7
8
9
44 A
20
43 A
19
42 A
8
41 A
9
40 A
10
39 A
11
38 A
12
37 A
13
36 A
14
Y
BUFFERS
AND
DECODER
SENSE AMP.
BUFFERS
A
4
A
3
A
2
A
0
A
1
10
11
CE 12
V
SS
13
OE 14
Q
0
Q
8
15
16
SOP
35 A
15
34 A
16
33 BHE
32 V
SS
31 Q
15
/A
-1
30 Q
7
29 Q
14
28 Q
6
27 Q
13
26 Q
5
25 Q
12
24 Q
4
23 V
CC
Q
1
17
Q
9
18
Q
2
Q
10
19
20
Pin Name
A
0
- A
21
Q
0
- Q
14
Q
15
/A
-1
BHE
CE
OE
V
CC
V
SS
Pin Function
Address Inputs
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
Word/Byte selection
Chip Enable
Output Enable
Power
Ground
Q
3
21
Q
11
22
K3N7V(U)1000C-GC

K3N7V1000C-GC12 Related Products

K3N7V1000C-GC12 K3N7V1000C-GC10 K3N7V1000C-GC100 K3N7V1000C-GC120 K3N7U1000C-GC120 K3N7U1000C-GC12
Description MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44 MASK ROM, 4MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 MASK ROM, 4MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44 MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44 MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code SOIC SOIC SOIC SOIC SOIC SOIC
package instruction SOP, SOP44,.63 SOP, SOP44,.63 SOP, SOP, SOP, SOP, SOP44,.63
Contacts 44 44 44 44 44 44
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 120 ns 100 ns 100 ns 120 ns 120 ns 120 ns
Spare memory width 8 8 8 8 8 8
JESD-30 code R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44
length 28.5 mm 28.5 mm 28.5 mm 28.5 mm 28.5 mm 28.5 mm
memory density 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit
Memory IC Type MASK ROM MASK ROM MASK ROM MASK ROM MASK ROM MASK ROM
memory width 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1
Number of terminals 44 44 44 44 44 44
word count 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words
character code 4000000 4000000 4000000 4000000 4000000 4000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 4MX16 4MX16 4MX16 4MX16 4MX16 4MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP SOP SOP SOP SOP SOP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 225 225 225 NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 3.1 mm 3.1 mm 3.1 mm 3.1 mm 3.1 mm 3.1 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.3 V 3.3 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3 V 3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED 30 30 30 NOT SPECIFIED
width 12.6 mm 12.6 mm 12.6 mm 12.6 mm 12.6 mm 12.6 mm
Maker SAMSUNG - SAMSUNG SAMSUNG SAMSUNG SAMSUNG
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