BYS11-90 and BYS11-100
Vishay Semiconductors
Schottky Barrier Rectifiers
DO-214AC
(SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
Dimensions in inches
and (millimeters)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
ge
olta
dV
de ge
ten Ran
Ex
0.066 MIN.
(1.68 MIN.)
0.052 MIN.
(1.32 MIN.)
Reverse Voltage
90 to 100V
Forward Current
1.0A
Mounting Pad Layout
0.094 MAX.
(2.38 MAX.)
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
0.220
(5.58) REF
Features
•
•
•
•
•
•
•
•
Low power loss, high efficiency
Low profile surface mount package
Built-in strain relief
Very low switching losses
Low reverse current
High surge capability
Guardring for overvoltage protection
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Mechanical Data
Case:
JEDEC DO-214AC molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity:
Color band denotes cathode end
Weight:
0.002oz., 0.064g
Maximum Ratings and Thermal Characteristics
(T
Parameter
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current single half
sine-wave superimposed on rated load
at 8.3ms
at 10ms
V
RRM
I
F(AV)
I
FSM
R
θJA
dv/dt
T
J
, T
STG
(T
A
= 25°C unless otherwise noted)
A
= 25°C unless otherwise noted)
Symbol
BYS11-90
BYS
109
90
1.5
40
30
BYS11-100
BYS
110
100
Unit
V
A
A
°C/W
V/µs
°C
Maximum Thermal Resistance – Junction Ambient
Voltage rate of change (V
R
)
Junction and storage temperature range
150
(1)
125
(2)
100
(3)
10,000
–55 to +150
Electrical Characteristics
Maximum DC reverse current
at V
RRM
(4)
Notes:
(1)
(2)
(3)
(4)
Maximum instantaneous forward voltage at 1A
(4)
T
J
= 25°C
T
J
= 100°C
V
F
I
R
750
100
1
mV
µA
mA
Mounted on epoxy-glass hard tissue
Mounted on epoxy-glass hard tissue, 50 mm
2
35
µm
Cu
Mounted on Al-oxide-ceramic (Al
2
O
3
), 50 mm
2
35
µm
Cu
Pulse test: 300µs pulse width, 1% duty cycle
Document Number 86014
15-Jan-04
www.vishay.com
1
BYS11-90 and BYS11-100
Vishay Semiconductors
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
vs. Forward Voltage
10.000
T
J
= 150°C
I
F
-- Forward Current (A)
Fig. 4 – Reverse Current
vs. Junction Temperature
1000
V
R
= V
RRM
1.000
I
R
-- Reverse Current (mA)
100
0.100
T
J
= 25°C
10
0.010
1
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
F
-- Forward Voltage (V)
0.1
0
40
80
120
160
T
j
-- JunctionTemperature (°C)
200
Fig. 2 – Max. Average Forward Current
vs. Ambient Temperature
P
R
-- Max. Reverse Power Dissipation (W)
Fig. 5 – Max. Reverse Power Dissipation
vs. Junction Temperature
2.0
R
thJA
= 25K/W
I
FAV
-- Average Forward Current (A)
2.0
1.6
1.2
0.8
0.4
0.0
0
V
R
= V
RRM
, Half Sinewave, R
thJA
= 25K/W
1.6
1.2
0.8
0.4
V
R
= V
RRM
100K/W
0
0
40
80
120
160
T
j
-- JunctionTemperature (°C)
200
40
80
120
160
200
T
amb
-- Ambient Temperature (°C)
Fig. 3 – Max. Average Forward Current
vs. Ambient Temperature
180
I
FAV
-- Average Forward Current (A)
Fig. 6 – Diode Capacitance
vs. Reverse Voltage
160
140
120
100
80
60
40
20
0
0.1
1.0
10.0
V
R
-- Reverse Voltage (V)
100.0
f=1MHz
2.0
1.6
V
R
= 0 V, Half Sinewave
C
D
-- Diode Capacitance (pF)
R
thJA
= 25K/W
1.2
0.8
0.4
0
0
40
80
120
160
T
amb
-- Ambient Temperature (°C)
200
125K/W
150K/W
100K/W
www.vishay.com
2
Document Number 86014
15-Jan-04
京公网安备 11010802033920号
EEWORLD
