BAW100G datasheet, PDF - EEWORLD Datasheet

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BAW100G: DescriptionRectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor diode; File Size443KB，2 Pages; ManufacturerCentral Semiconductor

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BAW100G Overview

Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3

BAW100G Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	2
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.35 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	85 V
Maximum reverse recovery time	0.006 µs
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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BAW100

BAW100G

SURFACE MOUNT

DUAL, ISOLATED HIGH SPEED

SILICON SWITCHING DIODES

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BAW100 and

BAW100G each consist of two electrically isolated high

speed silicon switching diodes packaged in an epoxy

molded SOT-143 surface mount case. This device is

designed for high speed switching applications.

•

The BAW100G is

Halogen Free

by design.

MARKING CODES:

BAW100:

CJSS

BAW100G: CJSG

SYMBOL

VRRM

IFRM

IFSM

TJ, Tstg

250

500

4.0

2.0

1.0

350

-65 to +150

357

UNITS

°C

°C/W

UNITS

μA

715

855

1.00

1.25

2.0

6.0

SOT-143 CASE

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0ms

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

BVR

trr

VR=25V, TA=150°C

VR=75V

VR=75V, TA=150°C

IR=100μA

IF=1.0mA

IF=10mA

IF=50mA

IF=150mA

VR=0, f=1.0MHz

IF=IR=10mA, RL=100Ω, Rec. to 1.0mA

1.0

R4 (20-November 2009)

BAW100G Related Products

	BAW100G	BAW100BKLEADFREE	BAW100BK	BAW100GBK	BAW100GTR	BAW100LEADFREE	BAW100TR
Description	Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3	Diode,	Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3	Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3	Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3	Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3	Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	conform to	incompatible	incompatible	incompatible	conform to	incompatible
Reach Compliance Code	not_compliant	compliant	not_compliant	not_compliant	not_compliant	compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum power dissipation	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W
Maximum repetitive peak reverse voltage	85 V	85 V	85 V	85 V	85 V	85 V	85 V
Maximum reverse recovery time	0.006 µs	0.006 µs	0.006 µs	0.006 µs	0.006 µs	0.006 µs	0.006 µs
surface mount	YES	YES	YES	YES	YES	YES	YES
package instruction	PLASTIC PACKAGE-3	-	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	R-PDSO-G4
Contacts	3	-	3	3	3	3	3
Configuration	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Diode component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	R-PDSO-G4	-	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e0	-	e0	e0	e0	e3	e0
Number of components	2	-	2	2	2	2	2
Number of terminals	4	-	4	4	4	4	4
Maximum output current	0.25 A	-	0.25 A	0.25 A	0.25 A	0.25 A	0.25 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Terminal surface	TIN LEAD	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	MATTE TIN (315)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum forward voltage (VF)	-	0.715 V	0.715 V	0.715 V	0.715 V	-	0.715 V
Maximum reverse current	-	50 µA	50 µA	50 µA	50 µA	-	50 µA
Reverse test voltage	-	75 V	75 V	75 V	75 V	-	75 V
Base Number Matches	-	1	1	1	1	-	-

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