QFET N-CHANNEL
FQP19N20L
FEATURES
BV
DSS
= 200V
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•
•
•
•
•
•
•
Advanced New Design
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge: 50nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 0.12Ω (Typ.)
1
2
3
R
DS(ON)
= 0.15Ω
I
D
= 19.4A
TO-220
1. Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (T
C
= 25°C)
Continuous Drain Current (T
C
= 100°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
= 25°C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
y
x
x
z
x
Value
200
19.4
12.3
78
±20
250
19.4
14
5.5
140
1.12
−55
to +150
°C
300
A
V
mJ
A
mJ
V/ns
W
W/°C
Units
V
A
THERMAL RESISTANCE
Symbol
R
θJC
R
θCS
R
θJA
Characteristics
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
−
0.5
−
Max.
0.89
−
62.5
°C/W
Units
REV. B
1
©
1999 Fairchild Semiconductor Corporation
FQP19N20L
QFET N-CHANNEL
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
Symbol
BV
DSS
∆BV/∆T
J
V
GS(th)
I
GSS
Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
Min.
200
−
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
0.16
−
−
−
−
−
0.12
18.5
1700
220
30
35
300
130
180
27
5.8
11.2
Max.
−
−
2.0
100
−100
1
10
0.15
−
2200
290
40
80
610
270
370
35
−
−
nC
V
DS
=160V, V
GS
=5V
I
D
=19.4A
See Fig 6 & Fig 12
{ |
ns
V
DD
=100V, I
D
=19.4A
R
G
=50Ω
See Fig 13
{|
pF
Units
V
V/°C
V
nA
µA
Ω
S
Test Conditions
V
GS
=0V, I
D
=250µA
I
D
=250µA,
See Fig 7
V
DS
=5V, I
D
=250µA
V
GS
=20V
V
GS
=
−20V
V
DS
=200V
V
DS
=160V, T
C
=125°C
V
GS
=5V, I
D
=9.7A
V
DS
=40V, I
D
=9.7A
V
GS
=0V, V
DS
=25V
f=1MHz
See Fig 5
{
{
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
x
{
Min.
−
−
−
−
−
Typ.
−
−
−
140
0.66
Max.
19.4
78
1.5
−
−
A
V
ns
µC
Units
Test Conditions
Integral reverse pn-diode
in the MOSFET
T
J
=25°C, I
S
=19.4A, V
GS
=0V
T
J
=25°C, I
F
=19.4A, V
DD
=160V
di
F
/dt=100A/µs
{
Notes:
x
Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
y
L=1mH, I
AS
=19.4A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
z
I
SD
≤
19.4A, di/dt
≤
300A/µs, V
DD
≤
BV
DSS
, Starting T
J
=25°C
{
Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%
|
Essentially Independent of Operating Temperature
2
QFET N-CHANNEL
FQP19N20L
Fig 1. Output Characteristics
Top :
V
GS
10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
Fig 2. Transfer Characteristics
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
10
1
150¡É
Bottom :
¡Ø Note :
1. 250¥ìs Pulse Test
2. T
C
= 25¡É
0
10
0
25¡É
-55¡É
10
¡Ø Note
1. V
DS
= 40V
2. 250¥ìs Pulse Test
10
-1
10
0
10
1
10
-1
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.8
Fig 4. Source-Drain Diode Forward Voltage
0.6
V
GS
= 5 V
0.4
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
R
DS(on)
, [
Ω
]
Drain-Source On-Resistance
10
1
10
0
150¡É
0.2
25¡É
¡Ø Note :
1. V
GS
= 0V
2. 250¥ìs Pulse Test
0.0
0
20
40
60
80
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
3500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Fig 6. Gate Charge vs. Gate-Source Voltage
12
3000
10
2500
V
GS
, Gate-Source Voltage [V]
V
DS
= 40V
8
Capacitances [pF]
C
iss
2000
V
DS
= 100V
V
DS
= 160V
6
1500
C
oss
¡Ø Note ;
1. V
GS
= 0 V
2. f = 1 MHz
4
1000
500
C
rss
2
¡Ø Note : I
D
= 19.4 A
0
-1
10
0
10
0
10
1
0
10
20
30
40
50
60
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
3
FQP19N20L
QFET N-CHANNEL
Fig 7. Breakdown Voltage vs. Temperature
1.2
3.0
Fig 8. On-Resistance vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.0
1.0
1.5
1.0
0.9
¡Ø Note :
1. V
GS
= 0 V
2. I
D
= 250 ¥ìA
0.5
¡Ø Note :
1. V
GS
= 5 V
2. I
D
= 9.7 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R
DS(on)
Fig 10. Max. Drain Current vs. Case Temperature
24
10
2
20
I
D
, Drain Current [A]
1 ms
10
1
10 ms
DC
I
D
, Drain Current [A]
100
µ
s
16
12
8
10
0
¡Ø Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
4
10
-1
10
0
10
1
10
2
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature
[
°
C]
[¡É]
Fig 11. Thermal Response
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5
0 .2
10
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
¡Ø N o t e s :
1 . Z
¥ è J C
(t ) = 0 . 8 9 ¡É / W M a x .
2 . D u t y F a c t o r , D =t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
¥ è J C
(t )
P
DM
t
1
t
2
Z
¥è JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a tio n [ s e c ]
4
QFET N-CHANNEL
FQP19N20L
Fig 12. Gate Charge Test Circuit & Waveform
50K
12V
200nF
300nF
Same Type
as DUT
V
GS
Q
g
10V
V
GS
V
DS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
5V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
V
DD
BV
DSS
I
AS
BV
DSS
1
---- L
L
I
AS2
--------------------
E
AS
=
2
BV
DSS
-- V
DD
I
D
(t)
V
DS
(t)
t
p
10V
Time
5
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