BZV55C3V9E3 datasheet, PDF - EEWORLD Datasheet

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BZV55C3V9E3: DescriptionZener Diode, 3.9V V(Z), 5.13%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, LEADLESS, LL34, MELF-2; CategoryDiscrete semiconductor diode; File Size24KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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BZV55C3V9E3 Overview

Zener Diode, 3.9V V(Z), 5.13%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, LEADLESS, LL34, MELF-2

BZV55C3V9E3 Parametric

Parameter Name	Attribute value
Maker	Microsemi
package instruction	O-LELF-R2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	METALLURGICALLY BONDED
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JEDEC-95 code	DO-213AA
JESD-30 code	O-LELF-R2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.5 W
Nominal reference voltage	3.9 V
surface mount	YES
technology	ZENER
Terminal form	WRAP AROUND
Terminal location	END
Maximum voltage tolerance	5.13%
Working test current	5 mA

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• ZENER DIODES

•LEADLESS PACKAGE FOR SURFACE MOUNT

• DOUBLE PLUG CONSTRUCTION

• METALLURGICALLY BONDED

BZV55 C2V4

thru

BZV55 C75

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Power Derating: 3.33 mW / °C above +50°C

Forward Voltage: @ 200mA: 1.1 Volts maximum

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise specified.

MAXIMUM

DIFFERENTIAL

RESISTANCE

rdiff @ I Z

OHMS

100

130

150

170

180

200

215

240

255

.700

.500

.200

.100

.050

MAXIMUM

REVERSE

CURRENT

IR @ VR

TYPE

ZENER VOLTAGE

(NOTE 1)

VZ @ I ZT

VOLTS

MIN

MAX

VOLTS

10.5

11.2

12.6

14.0

15.4

16.8

18.9

21.0

23.1

25.2

27.3

30.1

32.9

35.7

39.2

43.4

47.6

52.2

BZV55

C2V4

C2V7

C3V0

C3V3

C3V6

C3V9

C4V3

C4V7

C5V1

C5V6

C6V2

C6V8

C7V5

C8V2

C9V1

C10

C11

C12

C13

C15

C16

C18

C20

C22

C24

C27

C30

C33

C36

C39

C43

C47

C51

C56

C62

2.2

2.5

2.8

3.1

3.4

3.7

4.0

4.4

4.8

5.2

5.8

6.4

7.0

7.7

8.5

9.4

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

28.0

31.0

34.0

37.0

40.0

44.0

48.0

52.0

58.0

64.0

70.0

2.6

2.9

3.2

3.5

3.8

4.1

4.6

5.0

5.4

6.0

6.6

7.2

7.9

8.7

9.6

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

28.9

32.0

35.0

38.0

41.0

46.0

50.0

54.0

60.0

66.0

72.0

79.0

MILLIMETERS

INCHES

DIM MIN MAX MIN MAX

1.60

1.70 0.063 0.067

0.41

0.55 0.016 0.022

3.30

3.70 .130 .146

2.54 REF.

.100 REF.

0.03 MIN.

.001 MIN.

DESIGN DATA

CASE:

DO-213AA, Hermetically sealed

glass case. (MELF, SOD-80, LL34)

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE: (R

OJEC):

100 ÞC/W maximum at L = 0 inch

THERMAL IMPEDANCE: (Z

OJX): 35

ÞC/W maximum

POLARITY:

Diode to be operated with

the banded (cathode) end positive.

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) Of this Device is Approximately

+6PPM/°C. The COE of the Mounting

Surface System Should Be Selected To

Provide A Suitable Match With This

Device.

BZV55 C68

BZV55 C75

NOTE 1

Nominal Zener voltage is measured with the device junction in thermal

equilibrium at an ambient temperature of 25°C + 3°C.

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

FAX (978) 689-0803

WEBSITE: http://www.microsemi.com

165

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