Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Fairchild |
| Parts packaging code | SOT-223 |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Contacts | 4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 3 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 100 |
| JESD-30 code | R-PDSO-G4 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 2 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 75 MHz |
| FZT660 | FZT660A | |
|---|---|---|
| Description | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | Fairchild | Fairchild |
| Parts packaging code | SOT-223 | SOT-223 |
| package instruction | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Contacts | 4 | 4 |
| Reach Compliance Code | unknown | unknow |
| ECCN code | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 3 A | 3 A |
| Collector-emitter maximum voltage | 60 V | 60 V |
| Configuration | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 100 | 250 |
| JESD-30 code | R-PDSO-G4 | R-PDSO-G4 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 4 | 4 |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | PNP | PNP |
| Maximum power dissipation(Abs) | 2 W | 2 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON |
| Nominal transition frequency (fT) | 75 MHz | 75 MHz |
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