DF
N
PMPB11EN
14 January 2014
20
20
MD
-6
30 V N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
•
•
•
•
•
Trench MOSFET technology
Very fast switching
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
3. Applications
•
•
•
•
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= 10 V; I
D
= 9 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
30
20
13
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
12
14.5
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
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NXP Semiconductors
PMPB11EN
30 V N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
D
D
G
S
D
D
D
S
drain
drain
gate
source
drain
drain
drain
source
Simplified outline
1
2
3
7
6
5
4
G
S
017aaa253
Graphic symbol
D
8
Transparent top view
DFN2020MD-6 (SOT1220)
6. Ordering information
Table 3.
Ordering information
Package
Name
PMPB11EN
Description
Version
SOT1220
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals
Type number
7. Marking
Table 4.
Marking codes
Marking code
1C
Type number
PMPB11EN
PMPB11EN
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© NXP N.V. 2014. All rights reserved
Product data sheet
14 January 2014
2 / 15
NXP Semiconductors
PMPB11EN
30 V N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
T
amb
= 25 °C; t ≤ 5 s
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
junction temperature
ambient temperature
storage temperature
[1]
[1]
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
-
-55
-55
-65
Max
30
20
13
9
5.7
34
1.7
3.5
12.5
150
150
150
Unit
V
V
A
A
A
A
W
W
W
°C
°C
°C
Source-drain diode
source current
[1]
T
amb
= 25 °C
2
[1]
-
2.2
A
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
PMPB11EN
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© NXP N.V. 2014. All rights reserved
Product data sheet
14 January 2014
3 / 15
NXP Semiconductors
PMPB11EN
30 V N-channel Trench MOSFET
10
2
I
D
(A)
10
Limit R
DSon
= V
DS
/I
D
017aaa553
t
p
= 10 µs
t
p
= 100 µs
t
p
= 1 ms
1
t
p
= 10 ms
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
t
p
= 100 ms
10
-1
10
-2
10
-1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
235
67
33
5
Max
270
74
36
10
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm , t ≤ 5 s
2
2
PMPB11EN
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© NXP N.V. 2014. All rights reserved
Product data sheet
14 January 2014
4 / 15
NXP Semiconductors
PMPB11EN
30 V N-channel Trench MOSFET
10
3
Z
th(j-a)
(K/W)
10
2
017aaa542
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
10
0.05
0.01
0.02
0
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
017aaa543
duty cycle = 1
0.75
0.33
0.5
0.25
0.1
10
0.2
0.05
0
1
10
-3
0.02
0.01
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMPB11EN
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
14 January 2014
5 / 15
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