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TTW3C115N12LOF

Description
Trigger Device,
CategoryAnalog mixed-signal IC    Trigger device   
File Size117KB,10 Pages
ManufacturerEUPEC [eupec GmbH]
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Trigger Device,

TTW3C115N12LOF Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown

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Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT W3C 115 N 12...18 (ISOPACK)
N
W3
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert (pro Element)
RMS on-state current (per chip)
Effektivstrom (pro Phase)
RMS current (per arm)
T
C
= 85°C
T
C
= 73°C
Datenblatt gilt auch für TD W3H
Datasheet also applicable for TD W3H
T
vj
= - 40°C...T
vj max
V
DRM
, V
RRM
1200, 1400
1600, 1800
V
V
V
V
V
V
A
T
vj
= - 40°C...T
vj max
V
DSM
1200, 1400
1600, 1800
T
vj
= + 25°C...T
vj max
V
RSM
1300, 1500
1700, 1900
I
TRMSM
100
I
RMS
115
141
38
55
97
115
A
A
A
A
A
A
A
A
A²s
A²s
A/µs
T
A
= 45°C, KM 11
T
A
= 45°C, KM 33
T
A
= 35°C, KM 14 (V
L
= 45l/s)
T
A
= 35°C, KM 33 (V
L
= 90l/s)
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
DIN IEC 747-6
f = 50Hz, i
GM
= 0,6A, di
G
/dt = 0,6A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
8. Kennbuchstabe / 8th letter F
I
TSM
1000
870
I²t
5000
3780
(di/dt)
cr
120
(dv/dt)
cr
1000
V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
Zündverzug
gate controlled delay time
T
vj
= 25°C, v
D
= 6V, R
GK
20Ω
i
GM
= 0,6A, di
G
/dt = 0,6A/µs, t
g
= 10µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25°C, i
GM
= 0,6A, di
G
/dt = 0,6A/µs
T
vj
= 25°C, v
D
= 6V, R
A
= 5Ω
T
vj
= T
vj max
, v
D
= 6V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6V
T
vj
= 25°C, v
D
= 6V
T
vj
=T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
, i
T
= 150A
v
T
max.
1,81
V
V
(T0)
0,95
V
r
T
4,3
mΩ
I
GT
max.
150
mA
V
GT
max.
2,5
V
I
GD
max.
max.
5,0
2,5
0,2
mA
mA
V
V
GD
max.
I
H
max.
200
mA
I
L
max.
600
mA
i
D
, i
R
max.
10
mA
t
gd
max.
1,2
µs
MOD-E1; R. Jörke
09. Feb 99
A /99
Seite/page 1(9)
Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT W3C 115 N 12...18 (ISOPACK)
N
W3
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Freiwerdezeit
circuit commutated turn-off time
T
vj
= T
vj max
, i
TM
= 50A
v
RM
= 100V, V
DM
= 0,67 V
DRM
d
VD
/dt = 20V/µs, -di
T
/dt = 10A/µs
7. Kennbuchstabe / 7th letter O
t
q
typ.
V
ISOL
190
3,0
3,6
µs
kV
kV
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50Hz, t = 1min
RMS, f = 50Hz, t = 1sec
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per module,
Θ
= 180°sin
pro Element / per chip,
Θ
= 180°sin
pro Modul / per module, DC
pro Element / per chip, DC
R
thJC
max. 0,083
max. 0,500
max. 0,078
max. 0,470
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
max. junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
pro Modul / per module
pro Element / per chip
R
thCK
max. 0,033
max. 0,200
T
vj max
125
T
c op
- 40...+125
°C
T
stg
- 40...+130
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Si-Elemente mit Lötkontakt, glaspassiviert
Si-pellets with soldered contact, glass-passivated
Innere Isolation
internal insulation
Anzugsdrehmoment für mechanische Befestigung
mounting torque
Anzugsdrehmoment für elektrische Anschlüsse
terminal connection torque
Gewicht
weight
Kriechstrecke
creepage distance
Schwingfestigkeit
vibration resistance
f = 50Hz
Toleranz / tolerance +5% / -10%
Toleranz / tolerance ±15%
Seite 3
page 3
Al
2
O
3
M1
6
Nm
M2
6
Nm
G
typ.
300
g
12,5
mm
50
m/s²
Temperatursensor / Temperature sensor
Nennwiderstand
rated resistance
Verlustleistung
power dissipation
Kühlkörper / heatsinks : KM 11; KM 14; KM 17; KM 33
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung
mit den zugehörigen Technischen Erläuterungen. / This technical Information specifies semiconductor devices but promises no characteristics.
It is valid in combination with the belonging technical notes.
MOD-E1; R. Jörke
09. Feb 99
Seite/page 2(9)
T
C
= 25°C
R
100
= 493Ω ± 5%
T
C
= 25°C
R
25
5
kΩ
P
25
max.
20
mW
Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT W3C 115 N 12...18 (ISOPACK)
N
W3
ϑ
MOD-E1; R. Jörke
09. Feb 99
Seite/page 3(9)
Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT W3C 115 N 12...18 (ISOPACK)
N
W3
Analytische Elemente des transienten Wärmewiderstandes Z
thJC
für DC
Analytical elements of transient thermal impedance Z
thJC
for DC
Pos. n
1
2
3
4
5
6
7
R
thn
[
°
C / W
]
0,18100
0,25100 0,03520
τ
n
[
s
]
0,31800 0,03870 0,00109
Analytische Funktion:
Z
thJC
t
=
R
thn
1
e
τ
n
n
=
1
n
max
MOD-E1; R. Jörke
09. Feb 99
Seite/page 4(9)
Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT W3C 115 N 12...18 (ISOPACK)
N
W3
0,60
0,50
180° sin
DC
0,40
Z
thJC
[°C/W]
0,30
0,20
0,10
0,00
0,001
0,01
0,1
t [s]
1
10
Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm Z = f(t)
thJC
Parameter: Stromflußwinkel / Current conduction angle
Θ
MOD-E1; R. Jörke
09. Feb 99
Seite/page 5(9)

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Reach Compliance Code unknown unknown unknown
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