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W3EG264M64EFSU262D4S

Description
DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200
Categorystorage    storage   
File Size206KB,11 Pages
ManufacturerWhite Electronic Designs Corporation
Websitehttp://www.wedc.com/
Download Datasheet Parametric View All

W3EG264M64EFSU262D4S Overview

DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200

W3EG264M64EFSU262D4S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWhite Electronic Designs Corporation
package instructionDIMM,
Reach Compliance Codeunknown
access modeDUAL BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N200
memory density8589934592 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals200
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
White Electronic Designs
W3EG264M64EFSU-D4
PRELIMINARY*
1GB – 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA
FEATURES
Fast data transfer rate: PC-2100, PC-2700 and
PC3200
Clock speeds of 133 MHz, 166 MHz and 200MHz
Supports ECC error detection and correction
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 3 and 4 (clock)
Programmable Burst Length (2, 4 or 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh
Serial presence detect (SPD) with EEPROM
V
CC
= V
CCQ
= +2.6V ±0.1V (200MHz)
V
CC
= V
CCQ
= +2.5V ±0.2V (133 and 166MHz)
Gold edge contacts
Dual Rank
JEDEC standard 200 pin, small-outline, SO-DIMM
package
PCB height option:
D4: 31.75 mm (1.25”) TYP
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
DESCRIPTION
The W3EG264M64EFSU is a 2x64Mx64 Double Data Rate
SDRAM memory module based on 512Mb DDR SDRAM
components. The module consists of sixteen 64Mx8 DDR
SDRAMs in FBGA packages mounted on a 200 pin FR4
substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
OPERATING FREQUENCIES
DDR400@CL=3
Clock Speed
CL-t
RCD
-t
RP
200MHz
3-3-3
DDR333@CL=2.5
166MHz
2.5-3-3
DDR266@CL=2
133MHz
2-2-2
DDR266@CL=2.5
133MHz
2.5-3-3
May 2007
Rev. 1
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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