White Electronic Designs
W3H128M72E-XSBX
128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667, 533, 400
Package:
• 208 Plastic Ball Grid Array (PBGA), 16 x 22mm
• 1.0mm pitch
Core Supply Voltage = 1.8V ± 0.1V
I/O Supply Voltage = 1.8V ± 0.1V - (SSTL_18
compatible)
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Eight internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Programmable CAS latency: 4, 5 or 6
* This product is subject to change without notice.
CK/CK# Termination options available
• 0 ohm, 20 ohm
Posted CAS additive latency: 0, 1, 2, 3 or 4
Write latency = Read latency - 1* t
CK
Commercial, Industrial and Military Temperature
Ranges
Organized as 128M x 72
Weight: W3H128M72E-XSBX - 4 grams max
BENEFITS
56% space savings vs. FBGA
Reduced part count
50% I/O reduction vs FBGA
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Thinner "NB" version of part is under development.
Only difference in the part will be the thickness is
3.97mm (0.156) max, a reduction of .68mm (.027)
FIGURE 1 – DENSITY COMPARISONS
CSP Approach (mm)
11.5
11.5
11.5
11.5
11.5
W3H128M72E-XSBX
22
14.0
84
FBGA
84
FBGA
84
FBGA
84
FBGA
84
FBGA
White Electronic Designs
W3H128M72E-XSBX
16
S
A
V
I
N
G
S
56%
50%
Area
I/O
Count
5 x 161mm
2
= 805mm
2
5 x 84 balls = 420 balls
352mm
2
208 Balls
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
September 2009
Rev. 6
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
W3H128M72E-XSBX
FIGURE 2 – FUNCTIONAL BLOCK DIAGRAM
CS#
WE#
RAS#
CAS#
CKE
CS# WE# RAS# CAS# CKE
ODT
A0-13
BA0-2
DQ0
¥
CK
CK#
LDM
UDM
LDQS
LDQS#
UDQS
UDQS#
ODT
A0-13
BA0-2
CK0
CK0#
LDM0
UDM0
LDQS0
LDQS0#
UDQS0
UDQS0#
DQ0
U0
¥
¥
¥
¥
¥
DQ15
¥
¥
¥
¥
¥
¥
DQ15
CK1
CK1#
LDM1
UDM1
LDQS1
LDQS1#
UDQS1
UDQS1#
CS# WE# RAS# CAS# CKE
ODT
A0-13
DQ0
BA0-2
¥
CK
CK#
LDM
UDM
LDQS
LDQS#
UDQS
UDQS#
DQ16
U1
¥
¥
¥
¥
¥
DQ15
¥
¥
¥
¥
¥
¥
DQ31
CS# WE# RAS# CAS# CKE
ODT
A0-13
BA0-2
CK2
CK2#
LDM2
UDM2
LDQS2
LDQS2#
UDQS2
UDQS2#
CK
CK#
LDM
UDM
LDQS
LDQS#
UDQS
UDQS#
DQ0
DQ32
U2
¥
¥
¥
¥
¥
¥
DQ15
¥
¥
¥
¥
¥
¥
DQ47
CS# WE# RAS# CAS# CKE
ODT
A0-13
DQ0
BA0-2
CK3
CK3#
LDM3
UDM3
LDQS3
LDQS3#
UDQS3
UDQS3#
CK
CK#
LDM
UDM
LDQS
LDQS#
UDQS
UDQS#
DQ48
U3
¥
¥
¥
¥
¥
¥
DQ15
¥
¥
¥
¥
¥
¥
DQ63
CS# WE# RAS# CAS# CKE
ODT
A0-13
DQ0
BA0-2
CK4
CK4#
LDM4
V
CC
LDQS4
LDQS4#
Note: USQS4 and UDQS4# require a 10KΩ pull up resistor.
UDM4 is internally tied to VCC.
UDQS4
UDQS4#
CK
CK#
LDM
UDM
LDQS
LDQS#
UDQS
UDQS#
DQ64
U4
¥
¥
¥
¥
¥
¥
DQ7
¥
¥
¥
¥
¥
¥
DQ71
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
September 2009
Rev. 6
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
FIGURE 3 - PIN CONFIGURATION
TOP VIEW
W3H128M72E-XSBX
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
V
CC
2
V
CC
3
V
SS
4
V
CC
5
V
CC
6
V
SS
7
V
CC
8
V
CC
9
V
SS
10 11
V
CC
V
SS
V
SS
NC
NC
NC
NC
NC
NC
NC
V
SS
V
CC
V
SS
NC
NC
NC
NC
NC
NC
DQ34
CK3
CK3#
V
SS
DQ35
DQ51
NC
NC
NC
NC
DQ50
DQ53
DQ37
CK2#
CK2
DQ52
DQ36
DQ33
NC
BA2
DNU
DQ39
LDQS2
LDQS3
DQ48
DQ32
LDM3
LDM2
DQ49
DQ43
DQ59
DNU
DQ55
DQ58
DQ42
LDQS2#
LDQS3#
DQ38
DQ54
DQ60
DQ57
UDM2
V
SS
DQ63
DQ56
DQ40
DQ61
DQ45
UDM3
DQ44
DQ41
DQ46
DQ62
V
CC
UDQS2#
DQ47
UDQS2
UDQS3
UDQS3#
V
CC
A6
A10
A9
V
CC
V
SS
V
CC
A3
A12
A13
V
CC
V
SS
A0
A11
V
CC
V
SS
V
REF
V
SS
V
CC
A1
BA1
V
SS
V
CC
A2
A4
A8
V
CC
V
SS
V
CC
BA0
A5
A7
V
CC
UDQS1#
UDQS1
UDQS0
DQ15
UDQS0#
V
CC
DQ30
DQ14
DQ9
DQ12
UDM1
DQ13
DQ29
DQ8
DQ24
DQ31
V
SS
UDM0
DQ25
DQ28
DQ22
DQ6
LDQS1#
LDQS0#
DQ10
DQ26
DQ23
ODT
DQ27
DQ11
DQ17
LDM0
LDM1
DQ0
DQ16
LDQS1
LDQS0
DQ7
LDQS4#
UDQS4
UDQS4#
DQ1
DQ4
DQ20
CK0
CK0#
DQ5
DQ21
DQ18
LDQS4
DQ71
CKE
WE#
DQ19
DQ3
V
SS
CK1#
CK1
DQ2
RAS#
CAS#
DQ64
DQ70
DQ65
DQ68
V
SS
V
CC
V
SS
CK4#
CK4
CS#
DQ66
DQ69
LDM4
DQ67
V
SS
V
CC
V
SS
V
CC
V
SS
V
CC
V
CC
V
SS
Vcc
V
CC
V
SS
V
CC
V
SS
Note: UDQS4 and UDQS4# require a 10KΩ pull up resistor.
UDM4 is internally tied to Vcc
Balls F6 and E6 are reserved for A14 and A15 on future densities.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
September 2009
Rev. 6
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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
TABLE 1 – BALL DESCRIPTIONS
Symbol
ODT
Type
Input
Description
W3H128M72E-XSBX
On-Die termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When
enabled, ODT is only applied to each of the following balls: DQ0–DQ71, LDM, UDM, LDQS, LDQS#, UDQS, and
UDQS#. The ODT input will be ignored if disabled via the LOAD MODE command.
Clock: CK and CK# are differential clock inputs. All address and control input signals are sampled on the crossing
of the positive edge of CK and negative edge of CK#. Output data (DQs and DQS/DQS#) is referenced to the
crossings of CK and CK#.
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates clocking circuitry on the
DDR2 SDRAM. The specific circuitry that is enabled/disabled is dependent on the DDR2 SDRAM configuration
and operating mode. CKE LOW provides PRECHARGE power-down mode and SELF-REFRESH action (all banks
idle), or ACTIVE power-down (row active in any bank). CKE is synchronous for power-down entry, Power-down
exit, output disable, and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding
CKE, and ODT) are disabled during power-down. Input buffers (excluding CKE) are disabled during self refresh.
CKE is an SSTL_18 input but will detect a LVCMO SLOW level once V
CC
is applied during
fi
rst power-up. After
V
REF
has become stable during the power on and initialization sequence, it must be maintained for proper
operation of the CKE receiver. For proper SELF-REFRESH operation, V
REF
must be maintained.
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands
are masked when CS# is registered HIGH.
Command inputs: RAS#, CAS#, WE# (along with CS#) define the command being entered.
Input data mask: DM is an input mask signal for write data. Input data is masked when DM is concurrently sampled
HIGH during a WRITE access. DM is sampled on both edges of DQS. Although DM balls are input-only, the DM
loading is designed to match that of DQ and DQS balls. LDM is DM for lower byte DQ0–DQ7 and UDM is DM for
upper byte DQ8–DQ15, of each of U0-U4
Bank address inputs: BA0–BA2 define to which bank an ACTIVE, READ, WRITE, or PRECHARGE command is
being applied. BA0–BA2 define which mode register including MR, EMR, EMR(2), and EMR(3) is loaded during the
LOAD MODE command.
Continued on next page
CK, CK#
Input
CKE
Input
CS#
RAS#, CAS#,
WE#
LDM, UDM
Input
Input
Input
BA0–BA2
Input
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
September 2009
Rev. 6
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
W3H128M72E-XSBX
TABLE – 1 BALL DESCRIPTIONS
(continued)
A0-A13
Input
Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit
(A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10
sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW,
bank selected by BA2–BA0) or all banks (A10 HIGH) The address inputs also provide the op-code during a LOAD
MODE command.
Data input/output: Bidirectional data bus
Data strobe for upper byte: Output with read data, input with write data for source synchronous operation. Edge-
aligned with read data, center-aligned with write data. UDQS# is only used when differential data strobe mode is
enabled via the LOAD MODE command.
Data strobe for lower byte: Output with read data, input with write data for source synchronous operation. Edge-
aligned with read data, center-aligned with write data. LDQS# is only used when differential data strobe mode is
enabled via the LOAD MODE command.
Power Supply: I/O + core, V
CCQ
is common to V
CC
SSTL_18 reference voltage.
Ground
No connect: These balls should be left unconnected.
Future use; address bits A14 and A15 are reserved for future densities.
DQ0-71
UDQS, UDQS#
I/O
I/O
LDQS, LDQS#
V
CC
V
REF
V
SS
NC
DNU
I/O
Supply
Supply
Supply
-
-
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
September 2009
Rev. 6
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com