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W3H128M72E-400SBM

Description
DDR DRAM, 128MX72, 1.35ns, CMOS, PBGA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
Categorystorage    storage   
File Size989KB,32 Pages
ManufacturerWhite Electronic Designs Corporation
Websitehttp://www.wedc.com/
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W3H128M72E-400SBM Overview

DDR DRAM, 128MX72, 1.35ns, CMOS, PBGA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208

W3H128M72E-400SBM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWhite Electronic Designs Corporation
package instructionBGA, BGA208,11X19,40
Reach Compliance Codeunknown
access modeMULTI BANK PAGE BURST
Maximum access time1.35 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B208
memory density9663676416 bit
Memory IC TypeDDR DRAM
memory width72
Number of functions1
Number of ports1
Number of terminals208
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128MX72
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA208,11X19,40
Package shapeRECTANGULAR
Package formGRID ARRAY
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current0.055 A
Maximum slew rate1.775 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
White Electronic Designs
W3H128M72E-XSBX
128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667, 533, 400
Package:
• 208 Plastic Ball Grid Array (PBGA), 16 x 22mm
• 1.0mm pitch
Core Supply Voltage = 1.8V ± 0.1V
I/O Supply Voltage = 1.8V ± 0.1V - (SSTL_18
compatible)
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Eight internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Programmable CAS latency: 4, 5 or 6
* This product is subject to change without notice.
CK/CK# Termination options available
• 0 ohm, 20 ohm
Posted CAS additive latency: 0, 1, 2, 3 or 4
Write latency = Read latency - 1* t
CK
Commercial, Industrial and Military Temperature
Ranges
Organized as 128M x 72
Weight: W3H128M72E-XSBX - 4 grams max
BENEFITS
56% space savings vs. FBGA
Reduced part count
50% I/O reduction vs FBGA
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Thinner "NB" version of part is under development.
Only difference in the part will be the thickness is
3.97mm (0.156) max, a reduction of .68mm (.027)
FIGURE 1 – DENSITY COMPARISONS
CSP Approach (mm)
11.5
11.5
11.5
11.5
11.5
W3H128M72E-XSBX
22
14.0
84
FBGA
84
FBGA
84
FBGA
84
FBGA
84
FBGA
White Electronic Designs
W3H128M72E-XSBX
16
S
A
V
I
N
G
S
56%
50%
Area
I/O
Count
5 x 161mm
2
= 805mm
2
5 x 84 balls = 420 balls
352mm
2
208 Balls
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
September 2009
Rev. 6
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

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