DO238-3M datasheet, PDF - EEWORLD Datasheet

DO238-3M: DescriptionVariable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 12V, Silicon; CategoryDiscrete semiconductor diode; File Size60KB，1 Pages; ManufacturerMsi Electronics Inc

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DO238-3M Overview

Variable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 12V, Silicon

Parameter Name	Attribute value
Maker	Msi Electronics Inc
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	3% MATCHED SET OF THREE DIODES
Minimum breakdown voltage	12 V
Shell connection	ISOLATED
Configuration	SEPARATE, 3 ELEMENTS
Minimum diode capacitance ratio	7
Nominal diode capacitance	33 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	O-LALF-W2
Number of components	3
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
minimum quality factor	125
Maximum reverse current	0.01 µA
Reverse test voltage	10 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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