controlled single-pole double-throw analog switches. These
monolithic switch is designed to control analog signals with a
high degree of accuracy. The DG333A, DG333AL minimize
measurement errors by offering low on-resistance (25
typ),
low leakage (20 pA typ.) and low charge injection
performance. The DG333AL features micro-power operation
(< 1 µW typ.). This is ideal for battery operated systems. Pin
15 is not connected on the DG333A.
An improved charge injection compensation design
minimizes switching transients. These switches can handle
up to ± 22 V signals and have an improved continuous
current of 30 mA.
The DG333A, DG333AL is fabricated in Vishay Siliconix’s
proprietary HVSG-2 CMOS process, resulting in higher
speed and lower power consumption. An epitaxial layer
prevents latchup. Each switch conducts equally well in both
directions when on. When off, they block voltages up to the
power-supply levels.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
± 22 V supply voltage range
TTL and CMOS compatible logic
Low on-resistance (25
)
On-resistance matched between channels (< 2
)
Flat on-resistance over analog signal range ( < 3
)
Low charge injection (1 pC)
Low leakage (0.2 nA)
Fast switching (175 ns)
Single-supply operation (5 V to 40 V)
ESD tolerance > 2 kV per 3015.x
Low power (< 1 µA) - DG333A, DG333AL
Rail-to-rail analog signal range
Simple logic interface
High precision and accuracy
Minimal transients
Low distortion
Reduced power consumption
Improved reliability
Break-before-make switching action
Audio switching
Test equipment
Portable instrumentation
Communication systems
PBX, PABX
Computer peripherals
Mass storage systems
Switched-capacitor networks
Battery-powered systems
BENEFITS
APPLICATIONS
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Dual-In-Line and Wide-Body SOIC
Logic
SW1, 4, 5, 8
Normally Open
OFF
ON
SW2, 3, 6, 7
Normally Closed
ON
OFF
IN
1
S
1
D
1
S
2
V-
GND
S
3
D
2
S
4
1
2
3
4
5
6
7
8
9
20 IN
4
19 S
8
18 D
4
17 S
7
16 V+
15 V
L
(DG333AL Only)
14 S
6
13 D
3
12
11
Top View
S
5
IN3
0
1
Logic “0”
0.8
V
Logic “1”
2.4
V
ORDERING INFORMATION
Temp. Range
Package
20-Pin Plastic DIP
20-Pin Wide-Body SOIC
(shipped in tubes)
Part Number
a
DG333ADJ-E3
DG333ALDJ-E3
DG333ADW-E3
DG333ALDW-E3
- 40 °C to 85 °C
IN
2
10
20-Pin Wide-Body SOIC DG333ADW-T1-E3
(shipped in tape and reel) DG333ALDW-T1-E3
DG333ADQ-T1-E3
20-Pin TSSOP
(shipped in tape and reel) DG333ALDQ-T1-E3
Note:
a. For standard tin/lead external termination, remove the "-E3" from
the ordering part number.
Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG333A, DG333AL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltages Referenced V+ to V-
GND
V+ to GND
Digital Inputs
a
V
S
, V
D
Current, Any Terminal
Peak Current S or D (Pulsed at 1 ms, 10 % Duty Cycle Max.)
Storage Temperature
Power Dissipation (Package)
b
20-Pin Plastic DIP
c
20-Pin Wide SOIC
d
Limit
44
30
30
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 125
890
800
mA
°C
mW
V
Unit
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 12 mW/°C above 75 °C.
d. Derate 10 mW/°C above 75 °C.
SCHEMATIC DIAGRAM
(Typical Channel)
V+
S
2
V-
V+
DG333A
5V
Reg
Level
Shift/
Drive
IN
X
V-
V+
S
1
V
L
(DG333AL)
D
GND
V-
Figure 1.
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2
Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG333A, DG333AL
Vishay Siliconix
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
IN
= 2.4 V or 0.8 V
e
Limits D Suffix
- 40 °C to 85 °C
Temp.
a
Full
I
S
= - 10 mA, V
D
= ± 10 V
R
DS(on)
On-Resistance Flatness
R
DS(on)
Match Between Channels
f
Source Off Leakage Current
Channel On Leakage Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time Delay
Charge Injection
d
Off-Isolation
Channel-to-Channel Crosstalk
Off Capacitance
Channel On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Positive Supply Current
Logic Supply Current
Negative Supply Current
Supply Voltage Range
t
ON
t
OFF
t
D
Q
OIRR
X
TALK
C
OFF
C
ON
I+
I-
I+
I
L
I-
V+/V-
See switching time test circuit see figure 2
See figure 3
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
R
L
= 75
C
L
= 5 pF
V
D
= 2.3 V
RMS
, f = 1 MHz
f = 1 MHz, V
S
= 0 V
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
DG333AL: V
IN
= 0 or 5 V, V
L
= 5 V
Room
Room
Full
-1
±4
± 22
V
-1
1
1
µA
72
80
8
12
200
5
10
pC
dB
pF
175
145
ns
R
DS(on)
I
S(off)
I
D(on)
I
S
= - 10 mA, V
D
= ± 5 V
V+ = 16.5 V, V- = - 16.5 V
I
S
= - 10 mA, V
D
= ± 10 V
V
D
= 15.5 V, V
S
= 15.5 V
V+ = 16.5 V, V- = - 16.5 V
V
D
= ± 15.5 V, V
S(open)
= ± 15.5 V
V+ = 16.5 V, V- = - 16.5 V
Room
Full
Room
Full
Room
Full
Room
Hot
Room
Hot
Full
Full
V
INH
or V
INL
Full
-1
Min.
b
V-
25
Typ.
c
Max.
b
V+
45
90
3
5
2
4
0.25
20
0.75
60
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
Channel On-Resistance
Symbol
V
ANALOG
- 0.25
- 20
- 0.75
- 60
2.4
nA
V
INH
V
INL
I
INL
or I
INH
0.8
1
V
µA
DG333A: V
IN
= 0 or 5 V
Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG333A, DG333AL
Vishay Siliconix
SPECIFICATIONS
(Unipolar Supplies)
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
T
A
= 25°C
Limits D Suffix
- 40 °C to 85°C
Temp.
a
Full
I
S
= - 10 mA, V
D
= 10, 1 V
V
D
= 11 V, V
S(open)
= 1 V
V
D
= 11 V, V
S(open)
= 0 V
V
D
= 1 V, V
S(open)
= V+
Room
Room
Room
Min.
b
V-
35
Typ.
c
Max.
b
V+
75
0.25
0.75
nA
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
Channel On-Resistance
Source Off Leakage Current
Channel On Leakage Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time Delay
Power Supplies
Positive Supply Current
Positive Supply Current
Logic Supply Current
Positive Supply Range
Symbol
V
ANALOG
R
DS(on)
I
S(off)
I
D(on)
t
ON
t
OFF
t
D
See switching time test circuit see figure 2
See figure 3
Room
Room
Room
Room
Room
Room
Room
Room
5
5
90
45
10
200
1
1
1
40
V
µA
ns
I+
I+
I
L
V+
DG333A: V
IN
= 0 or 5 V
DG333AL: V
IN
= 0 or 5 V, V
L
= 5 V
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. V
IN
= input voltage to perform proper function.
f. On-resistance match and flatness are guaranteed only for bipolar supply operation.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
40
7.5 V
35
R
DS(on)
- On-Resistance ()
R
(DS)on
- On-Resistance (Ω)
40
35
125 °C
30
85
°C
70 °C
25 °C
0 °C
15
- 40 °C
- 55 °C
30
10 V
25
15 V
20
20 V
15
25
20
10
- 20
- 15
- 10
-5
0
5
10
15
20
10
- 15
- 10
-5
0
5
10
15
V
D
- Drain Voltage (V)
V
D
- Drain
Voltage
(V)
R
DS(on)
vs. V
D
(Dual Supply)
R
DS(on)
vs. V
D
and Temperature (Dual Supply)
www.vishay.com
4
Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG333A, DG333AL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
180
75
150
5V
120
R
(DS)on
- On-Resistance ()
63
51
125 °C
39
85 °C
70 °C
25 °C
0 °C
- 40 °C
- 55 °C
90
7V
10 V
60
12 V
15 V
30
27
0
0
3
6
9
12
15
V
D
- Drain Voltage (V)
15
0
2
4
6
8
V
D
- Drain V oltage (V)
10
12
R
DS(on)
vs. V
D
(Single Supply)
30
V+
= 15
V
V-
= - 15
V
20
R
DS(on)
vs. V
D
and Temperature (Single Supply)
40
30
20
10
I
D(off)
, I
S(off)
Q (pC)
I
D(on)
- 10
- 20
- 30
- 15
10
0
I (pA)
0
- 10
- 20
- 30
- 15
- 10
-5
0
5
10
15
V
D
or
V
S
- Drain or Source
Voltage
(V)
- 10
-5
0
5
10
15
V
S
- Source Voltage (V)
Leakage Currents vs. Analog Voltage
Drain Charge Injection
3.5
3.0
2.5
V
IN
(V)
2.0
1.5
1.0
0.5
0
5
10
15
20
(V+)
25
30
35
40
120
V+ = 15 V, V- = - 15 V
V
IN
= 3 V Pulse
100
t
ON
t
ON
, t
OFF
(ns)
80
t
OFF
60
40
20
0
- 55 - 40 - 20
0
20
40
60
80
100
120
Temperature (°C)
Input Switching Threshold vs. Supply Voltages
Switching Time vs. Temperature
Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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