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DRCF143E

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ML3-N4-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size239KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DRCF143E Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ML3-N4-B, 3 PIN

DRCF143E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionCHIP CARRIER, R-XBCC-N3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)20
JESD-30 codeR-XBCC-N3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
This product complies with the RoHS Directive (EU 2002/95/EC).
DRCF143E
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRAF143E
DRC3143E in ML3 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, mount area reduction
Eco-friendly Halogen-free package
Package
Code
ML3-N4-B
Package dimension clicks here.→
Click!
Packaging
DRCF143E0L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
100
150
–55 to +150
Unit
V
V
mA
mW
°C
°C
Name
Pin
1: Base
2: Emitter
3: Collector
Marking Symbol: N5
Internal Connection
B
R
1
R
2
C
E
Resistance value
R
1
R
2
4.7
4.7
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 100 µA
–30%
0.8
4.7
1.0
1.9
0.8
+30%
1.2
20
0.25
Min
50
50
0.1
0.5
2.0
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2012
Ver. AED
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