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CY62256VN
256K (32K x 8) Static RAM
Features
■
Functional Description
The CY62256VN
[1]
family is composed of two high performance
CMOS static RAM’s organized as 32K words by 8 bits. Easy
memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and tristate drivers.
These devices have an automatic power down feature, reducing
the power consumption by over 99% when deselected.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location addressed
by the address present on the address pins (A
0
through A
14
).
Reading the device is accomplished by selecting the device and
enabling the outputs, CE and OE active LOW, while WE remains
inactive or HIGH. Under these conditions, the contents of the
location addressed by the information on address pins are
present on the eight data input/output pins.
The input/output pins remain in a high impedance state unless
the chip is selected, outputs are enabled, and write enable (WE)
is HIGH.
Temperature Ranges
❐
Commercial: 0°C to 70°C
❐
Industrial: –40°C to 85°C
❐
Automotive-A: –40°C to 85°C
❐
Automotive-E: –40°C to 125°C
Speed: 70 ns
Low Voltage Range: 2.7V to 3.6V
Low Active Power and Standby Power
Easy Memory Expansion with CE and OE Features
TTL Compatible Inputs and Outputs
Automatic Power Down when Deselected
CMOS for Optimum Speed and Power
Available in Standard Pb-free and non Pb-free 28-Pin (300-mil)
Narrow SOIC, 28-Pin TSOP-I, and 28-Pin Reverse TSOP-I
Packages
■
■
■
■
■
■
■
■
Logic Block Diagram
INPUTBUFFER
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
CE
WE
OE
A
14
A
13
A
12
A
11
A
1
A
0
ROW DECODER
I/O
0
I/O
1
SENSE AMPS
I/O
2
I/O
3
I/O
4
I/O
5
32K x 8
Y
ARRA
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
.
Note
1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” on
http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 001-06512 Rev. *B
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised September 25, 2009
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CY62256VN
Product Portfolio
Product
CY62256VNLL
CY62256VNLL
CY62256VNLL
CY62256VNLL
Com’l
Ind’l
Automotive-A
Automotive-E
Range
Min
2.7
2.7
2.7
2.7
V
CC
Range (V)
Typ
[2]
3.0
3.0
3.0
3.0
Max
3.6
3.6
3.6
3.6
Power Dissipation
Operating, I
CC
(mA)
Typ
[2]
11
11
11
11
Max
30
30
30
30
Standby, I
SB2
(μA)
Typ
[2]
0.1
0.1
0.1
0.1
Max
5
10
10
130
Pin Configurations
Narrow SOIC
Top View
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A4
A3
A2
A1
OE
A0
CE
I/O7
I/O6
I/O5
I/O4
I/O3
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
TSOP I
Top View
(not to scale)
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
14
A
13
A
12
A
11
A
10
A
9
A
8
A
7
A
6
A
5
V
CC
WE
A
4
A
3
A
2
A
1
OE
7
6
5
4
3
2
1
28
27
26
25
24
23
22
8
9
10
11
12
13
14
15
16
17
18
19
20
21
TSOP I
Reverse Pinout
Top View
(not to scale)
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
GND
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
A
0
Pin Definitions
Pin Number
1–10, 21, 23–26 Input
11–13, 15–19
27
20
22
14
28
Input/Output
Input/Control
Input/Control
Input/Control
Ground
Power Supply
Type
A
0
–A
14
. Address Inputs
I/O
0
–I/O
7
. Data lines. Used as input or output lines depending on operation
WE.
When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted
CE.
When LOW, selects the chip. When HIGH, deselects the chip
OE.
Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins behave as
outputs. When deasserted HIGH, I/O pins are tristated, and act as input data pins
GND.
Ground for the device
V
CC
. Power supply for the device
Description
Note
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC
Typ, T
A
= 25°C, and t
AA
= 70 ns.
Document #: 001-06512 Rev. *B
Page 2 of 13
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CY62256VN
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied ........................................... –55°C to + 125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14)...........................................–0.5V to + 4.6V
DC Voltage Applied to Outputs
in High-Z State
[3]
.................................... –0.5V to V
CC
+ 0.5V
DC Input
Voltage
[3]
................................ –0.5V to V
CC
+ 0.5V
Output Current into Outputs (LOW) ............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
(T
A
)
[4]
0
°
C to +70
°
C
−40
°
C to +85
°
C
−40
°
C to +85
°
C
−40
°
C to +125
°
C
V
CC
2.7V to 3.6V
CY62256VN Commercial
Industrial
Automotive-A
Automotive-E
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
CC
Operating Supply
Current
Automatic CE Power
Down Current -
TTL Inputs
Automatic CE Power
Down Current- CMOS
Inputs
GND < V
IN
< V
CC
GND < V
IN
< V
CC
, Output
Disabled
V
CC
= 3.6V, I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Com’l/Ind’l/Auto-A
Auto-E
Com’l/Ind’l/Auto-A
Auto-E
All Ranges
I
OH
=
−1.0
mA
I
OL
= 2.1 mA
Test Conditions
V
CC
= 2.7V
V
CC
= 2.7V
2.2
–0.5
–1
–10
–1
–10
11
100
-70
Min
2.4
0.4
V
CC
+ 0.3V
0.8
+1
+10
+1
+10
30
300
Typ
[2]
Max
Unit
V
V
V
V
μA
μA
μA
μA
mA
μA
V
CC
= 3.6V, CE > V
IH
,
All Ranges
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
V
CC
= 3.6V, CE > V
CC
– 0.3V Com’l
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V,
Ind’l/Auto-A
f=0
Auto-E
I
SB2
0.1
5
10
130
μA
Notes
3. V
IL
(min) = –2.0V for pulse durations of less than 20 ns.
4. T
A
is the “Instant-On” case temperature.
Document #: 001-06512 Rev. *B
Page 3 of 13
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CY62256VN
Capacitance
[5]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 3.0V
Max
6
8
Unit
pF
pF
Thermal Resistance
[5]
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Figure 1. AC Test Loads and Waveforms
R1
V
CC
OUTPUT
50 pF
INCLUDING
JIG AND
SCOPE
R2
V
CC
10%
GND
< 5 ns
Equivalent to:
THÉVENIN EQUIVALENT
R
th
OUTPUT
V
th
ALL INPUT PULSES
90%
90%
10%
< 5 ns
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
SOIC
68.45
26.94
TSOPI
87.62
23.73
RTSOPI
87.62
23.73
Unit
°C/W
°C/W
Parameter
R1
R2
RTH
VTH
Value
1100
1500
645
1.750
Units
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
Description
V
CC
for Data Retention
Data Retention Current
V
CC
= 1.4V,
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V
or V
IN
< 0.3V
Com’l
Ind’l/Auto-A
Auto-E
0
t
RC
Figure 2. Data Retention Waveform
DATA RETENTION MODE
V
CC
1.8V
t
CDR
CE
Notes
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed V
CC
+ 0.3V.
Conditions
[6]
Min
1.4
Typ
[2]
0.1
Max
3
6
50
Unit
V
μA
t
CDR[6]
t
R[5]
Chip Deselect to Data
Retention Time
Operation Recovery Time
ns
ns
V
DR
> 1.4V
1.8V
t
R
Document #: 001-06512 Rev. *B
Page 4 of 13
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