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K6T2008U2M-YB85

Description
Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32
Categorystorage    storage   
File Size147KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K6T2008U2M-YB85 Overview

Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32

K6T2008U2M-YB85 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP1
package instructionTSOP1, TSSOP32,.56,20
Contacts32
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length11.8 mm
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.56,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Minimum standby current2 V
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)3.3 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
K6T2008V2M, K6T2008U2M Family
Document Title
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
0.1
1.0
History
Design target
Initial draft
Finalize
- Improved V
IL
(Min.) : 0.4V
0.6V
- Erase reverse type package
- Change speed bin
KM68V2000 : 70/85ns
KM68V2000I, KM68U2000, KM68U2000I : 85/100ns
- Improved standby current
Commercial product : 15µA
10µA
Industrial product : 30µA
15µA
- Increased Power dissipation : 0.7W
1.0W
Draft Data
January 30, 1997
April 7, 1997
November 27, 1997
Remark
Advance
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
Revision 1.0
November 1997
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