KMM464S924AT1-FH datasheet, PDF

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KMM464S924AT1-FH: DescriptionSynchronous DRAM Module, 8MX64, 6ns, CMOS; Categorystorage storage; File Size162KB，10 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KMM464S924AT1-FH Overview

Synchronous DRAM Module, 8MX64, 6ns, CMOS

KMM464S924AT1-FH Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N144
memory density	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	144
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX64
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	DUAL

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KMM464S924AT1

Revision History

Revision 0.0 (June 7, 1999)

PC100 SODIMM

• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.

• Skip ICC4 value of CL=2 in DC characteristics in datasheet.

• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

• Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.

• Symbol Change Notice

Before

Input leakage current (inputs)

Input leakage current (I/O pins)

Output open @ DC characteristic table

After

Input leakage current

Output open @ DC characteristic table

•

Test Condition in

DC CHARACTERISTIC Change Notice

Symbol

CC2P ,

CC3P

CC2N ,

CC3N

CC4

Before

CKE

≤

(max), t

= 15ns

CKE

≥

(min), CS

≥

(min), t

= 15ns

Input signals are changed one time during 30ns

2 Banks activated

After

CKE

≤

(max), t

= 10ns

CKE

≥

(min), CS

≥

(min), t

= 10ns

Input signals are changed one time during 20ns

4 Banks activated

Rev. 0.0 Jun. 1999

KMM464S924AT1-FH Related Products

	KMM464S924AT1-FH	KMM464S924AT1-FL
Description	Synchronous DRAM Module, 8MX64, 6ns, CMOS	Synchronous DRAM Module, 8MX64, 6ns, CMOS
Maker	SAMSUNG	SAMSUNG
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N144	R-XDMA-N144
memory density	536870912 bit	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64
Number of functions	1	1
Number of ports	1	1
Number of terminals	144	144
word count	8388608 words	8388608 words
character code	8000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	8MX64	8MX64
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified	Not Qualified
self refresh	YES	YES
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL

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