L2N7002KWT3G datasheet, PDF - EEWORLD Datasheet

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L2N7002KWT3G: DescriptionSmall Signal Field-Effect Transistor,; CategoryDiscrete semiconductor The transistor; File Size500KB，6 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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L2N7002KWT3G Overview

Small Signal Field-Effect Transistor,

L2N7002KWT3G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.32 A
Maximum drain-source on-resistance	2.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal surface	NOT APPLICABLE
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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L2N7002KWT1G

S-L2N7002KWT1G

Small Signal MOSFET

380 mAmps, 60 Volts N–Channel SC-70

1. FEATURES

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

●

SC70(SOT-323)

●

ESD Protected

2. DEVICE MARKING AND ORDERING INFORMATION

Device

L2N7002KWT1G

L2N7002KWT3G

Marking

Shipping

3000/Tape&Reel

10000/Tape&Reel

3. MAXIMUM RATINGS(Ta = 25º

Parameter

Drain–Source Voltage

Gate-Source Voltage

Drain Current

– Steady State TA = 25°

TA = 85°

– t<5s

TA = 25°

TA = 85°

Pulsed Drain Current (tp=10μs)

Source Current (Body Diode)

IDM

Symbol

VDSS

VGS

320

230

380

270

1.5

300

Limits

±20

Unit

Vdc

mAdc

4. THERMAL CHARACTERISTICS

Parameter

Total Device Dissipation(Note 1)

– Steady State

– t<5s

Junction−to−Ambient(Note 1)

– Steady State

– t<5s

Lead Temperature for Soldering

Purposes (1/8 " from case for 10 s)

Junction and Storage temperature

Gate−Source ESD Rating(HBM,

Method 3015)

1. FR–5 = 1.0×0.75×0.062 in.

Leshan Radio Company, LTD.

Rev.E Mar 2016

1/6

Symbol

Limits

300

420

Unit

RΘJA

417

300

TJ,Tstg

ESD

260

−55∼+150

2000

C/W

ºC

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