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TSM190N08

Description
75V N-Channel Power MOSFET
File Size59KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSM190N08 Overview

75V N-Channel Power MOSFET

TSM190N08
75V N-Channel Power MOSFET
TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
75
R
DS(on)
(mΩ)
4.2 @ V
GS
=10V
I
D
(A)
190
Features
Advanced Trench Technology
Low R
DS(ON)
4.2mΩ (Max.)
Low gate charge typical @ 160nC (Typ.)
Low Crss typical @ 300pF (Typ.)
Block Diagram
Ordering Information
Part No.
TSM190N08CZ C0
Package
TO-220
Packing
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
=25°
C
T
C
=70°
C
T
A
=25°
C
T
A
=70°
C
Drain Current-Pulsed Note 1
Avalanche Current, L=0.3mH
Avalanche Energy, L=0.3mH
T
C
=25°
C
T
C
=70°
C
T
A
=25°
C
T
A
=70°
C
I
DM
I
AS
, I
AR
E
AS
, E
AR
Symbol
V
DS
V
GS
Limit
75
±20
190
150
17
14
600
113
1900
250
160
2
1.3
-55 to +150
-55 to +150
Unit
V
V
Continuous Drain Current
I
D
A
A
A
mJ
Maximum Power Dissipation
P
D
W
Storage Temperature Range
Operating Junction Temperature Range
* Limited by maximum junction temperature
T
STG
T
J
°
C
°
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t
10sec
Symbol
JC
JA
Limit
0.5
62.5
Unit
o
o
C/W
C/W
1/4
Version: A12

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