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FQA8N90C-F109

Description
N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω
File Size1MB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FQA8N90C-F109 Overview

N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω

FQA8N90C_F109
— N-Channel
QFET
®
MOSFET
December
2013
FQA8N90C_F109
900 V, 8 A, 1.9 Ω
Features
• Low Crss (Typ. 12 pF)
• 100%
Avalanche Tested
• RoHS
Compliant
N-Channel
QFET®
MOSFET
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
• 8 A, 900 V, R
DS(on)
= 1.9
(Max.)
@ V
GS
= 10 V,
I
D
= 4 V
• Low
Gate Charge
(Typ. 35 nC)
G
G
D
S
TO-3PN
S
T
C
= 25°C unless otherwise noted.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FQA8N90C_F109
900
8.0
5.1
32
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
850
8.0
24
4.0
240
1.92
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case,
Max.
Thermal Resistance, Case-to-Sink,
Typ.
Thermal Resistance, Junction-to-Ambient,
Max.
FQA8N90C_F109
0.52
0.24
40
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQA8N90C_F109 Rev C1
1
www.fairchildsemi.com
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