b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 73324
S-50525—Rev. A, 28-Mar-05
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 9.5 A, di/dt = 100 A/ms, T
J
= 25_C
95A
A/ms
I
S
= 2.3 A
0.70
30
26
16
14
T
C
= 25_C
4
50
1.1
45
40
A
V
ns
nC
ns
2
Si4684DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 10 thru 3 V
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
40
1.2
1.0
0.8
0.6
T
C
= 125_C
0.4
0.2
0.0
0.0
Vishay Siliconix
Transfer Characteristics
30
20
2V
10
25_C
−55_C
1.0
1.5
2.0
0
0.0
0.5
1.0
1.5
2.0
0.5
V
DS
−
Drain-to-Source Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
0.012
0.011
0.010
0.009
On-Resistance vs. Drain Current and Gate Voltage
2500
Capacitance
C
iss
r
DS(on)
−
On-Resistance (mW)
2000
V
GS
= 4.5 V
C
−
Capacitance (pF)
1500
V
GS
= 10 V
0.008
0.007
0.006
0
5
10
15
20
25
30
35
40
1000
500
C
rss
C
oss
0
0
5
10
15
20
25
30
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
10
V
GS
−
Gate-to-Source Voltage (V)
I
D
= 11 A
8
Gate Charge
1.8
1.6
r
DS(on)
−
On-Resiistance
(Normalized)
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
I
D
= 12 A
V
GS
= 10 V
6
V
GS
= 4.5 V
4
V
DS
= 10 V
V
DS
= 15 V
V
DS
= 20 V
2
0
0
4
8
12
16
20
24
28
32
Q
g
−
Total Gate Charge (nC)
Document Number: 73324
S-50525—Rev. A, 28-Mar-05
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
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3
Si4684DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40
r
DS(on)
−
Drain-to-Source On-Resistance (W)
10
I
S
−
Source Current (A)
T
J
= 150_C
0.05
I
D
= 12 A
0.04
On-Resistance vs. Gate-to-Source Voltage
1
0.03
0.1
0.02
T
J
= 125_C
0.01
T
J
= 25_C
0.00
0.01
T
J
= 25_C
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
−
Source-to-Drain Voltage (V)
0
2
4
6
8
10
V
GS
−
Gate-to-Source Voltage (V)
Threshold Voltage
0.4
200
Single Pulse Power, Junction-to-Ambient
0.2
160
V
GS(th)
(V)
−0.0
I
D
= 5 mA
Power (W)
120
−0.2
80
−0.4
I
D
= 250
mA
−0.6
−50
40
−25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
−
Temperature (_C)
100
Safe Operating Area, Junction-to-Ambient
*Limited by r
DS(on)
10
I
D
−
Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
T
A
= 25_C
Single Pulse
0.01
0.1
1
10
1s
10 s
dc
100
V
DS
−
Drain-to-Source Voltage (V)
*V
GS
u
minimum V
GS
at which r
DS(on)
is specified
www.vishay.com
4
Document Number: 73324
S-50525—Rev. A, 28-Mar-05
Si4684DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
Vishay Siliconix
Current De-Rating*
100
Single Pulse Avalanche Capability
16
I
D
−
Drain Current (A)
I
C
−
Peak Avalanche Current (A)
10
12
8
1
T
A
+
0.1
L
@
I
D
4
Package Limited
BV
*
V
DD
0
0
25
50
75
100
125
150
0.00001
0.0001
0.001
0.01
0.1
1
T
C
−
Case Temperature (_C)
T
A
−
Time In Avalanche (sec)
*The power dissipation P
D
is based on T
J(max)
= 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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