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MT41J256M16HA-093:E

Description
DDR DRAM, 256MX16, 0.18ns, CMOS, PBGA96, FBGA-96
Categorystorage    storage   
File Size3MB,211 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT41J256M16HA-093:E Overview

DDR DRAM, 256MX16, 0.18ns, CMOS, PBGA96, FBGA-96

MT41J256M16HA-093:E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionTFBGA, BGA96,9X16,32
Reach Compliance Codecompliant
access modeMULTI BANK PAGE BURST
Maximum access time0.18 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)1066 MHz
I/O typeCOMMON
interleaved burst length8
JESD-30 codeR-PBGA-B96
JESD-609 codee1
length14 mm
memory density4294967296 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals96
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize256MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA96,9X16,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.5 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length8
Maximum standby current0.018 A
Maximum slew rate0.305 mA
Maximum supply voltage (Vsup)1.575 V
Minimum supply voltage (Vsup)1.425 V
Nominal supply voltage (Vsup)1.5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width9 mm
4Gb: x4, x8, x16 DDR3 SDRAM
Features
DDR3 SDRAM
MT41J1G4 – 128 Meg x 4 x 8 banks
MT41J512M8 – 64 Meg x 8 x 8 banks
MT41J256M16 – 32 Meg x 16 x 8 banks
Features
V
DD
= V
DDQ
= 1.5V ±0.075V
1.5V center-terminated push/pull I/O
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
8 internal banks
Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
Programmable CAS READ latency (CL)
Posted CAS additive latency (AL)
Programmable CAS WRITE latency (CWL) based on
t
CK
Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
Selectable BC4 or BL8 on-the-fly (OTF)
Self refresh mode
T
C
of 0°C to 95°C
– 64ms, 8192 cycle refresh at 0°C to 85°C
– 32ms, 8192 cycle refresh at 85°C to 95°C
Self refresh temperature (SRT)
Automatic self refresh temperature (ASR)
Write leveling
Multipurpose register
Output driver calibration
Options
1
• Configuration
– 1 Gig x 4
– 512 Meg x 8
– 256 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (9mm x 10.5mm) Rev. E
• FBGA package (Pb-free) – x16
– 96-ball (9mm x 14mm) Rev. E
• Timing – cycle time
– 938ps @ CL = 14 (DDR3-2133)
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
• Operating temperature
– Commercial (0°C
T
C
+95°C)
– Industrial (–40°C
T
C
+95°C)
• Revision
Note:
Marking
1G4
512M8
256M16
RH
HA
-093
-107
-125
-15E
-187E
None
IT
:E
1. Not all options listed can be combined to
define an offered product. Use the part
catalog search on
http://www.micron.com
for available offerings.
Table 1: Key Timing Parameters
Speed Grade
-093
1, 2, 3, 4
-107
1, 2, 3
-125
1, 2,
-15E
1,
-187E
Notes:
1.
2.
3.
4.
Data Rate (MT/s)
2133
1866
1600
1333
1066
Target
t
RCD-
t
RP-CL
14-14-14
13-13-13
11-11-11
9-9-9
7-7-7
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.13
13.91
13.75
13.5
13.1
13.13
13.91
13.75
13.5
13.1
13.13
13.91
13.75
13.5
13.1
Backward compatible to 1066, CL = 7 (-187E).
Backward compatible to 1333, CL = 9 (-15E).
Backward compatible to 1600, CL = 11 (-125).
Backward compatible to 1866, CL = 13 (-107).
PDF: 09005aef8417277b
4Gb_DDR3_SDRAM.pdf - Rev. N 12/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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